Polaron Effect In Semiconductor Quantum Dots: Impact On The Optical Absorption, Up-converted Photoluminescence And Raman Scattering

2005 ◽  
Author(s):  
M. I. Vasilevskiy
2004 ◽  
Vol 19 (4) ◽  
pp. S312-S315 ◽  
Author(s):  
M I Vasilevskiy ◽  
R P Miranda ◽  
E V Anda ◽  
S S Makler

2011 ◽  
Vol 25 (32) ◽  
pp. 4387-4393 ◽  
Author(s):  
HAI-CHAO SUN ◽  
CUI-HONG LIU

The differential cross section (DCS) for exciton-mediated Raman scattering (EMRS) in one-dimensional semiconductor quantum dots is presented. The exciton states are considered as intermediate states in the Raman scattering process. The selection rules for the EMRS process are studied. The numerical results show that the contribution to DCS indicated by exciton is larger than that by electron. DCS of EMRS is larger when there is a bigger confinement potential frequency.


2017 ◽  
Vol 17 (2) ◽  
pp. 1140-1148
Author(s):  
K Monsalve-Calderón ◽  
A Gil-Corrales ◽  
A.L Morales ◽  
R.L Restrepo ◽  
M. E Mora-Ramos ◽  
...  

1989 ◽  
Vol 03 (08) ◽  
pp. 1167-1181 ◽  
Author(s):  
P.A.M. RODRIGUES ◽  
HILDA A. CERDEIRA ◽  
F. CERDEIRA

We develop a model appropriate for describing the Raman spectrum of samples, containing a collection of semiconductor quantum dots with and without dispersion in their linear dimensions. These nanometer size crystallites are assumed to have the same atomic arrangement as that of the bulk material and to be embedded in a host material made up of a different semiconductor of the same crystal structure. The results from our calculations are compared to previous models for polycrystalline materials.


2002 ◽  
Vol 12 (01) ◽  
pp. 15-43 ◽  
Author(s):  
ANDREW J. WILLIAMSON

We describe a procedure for calculating the electronic structure of semiconductor quantum dots containing over one million atoms. The single particle electron levels are calculated by solving a Hamiltonian constructed from screened atomic pseudopotentials. Effects beyond the single particle level such as electron and hole exchange and correlation interactions are described using a configuration interaction (CI) approach. Application of these methods to the calculation of the optical absorption spectrum, Coulomb repulsions and multi-exciton binding energies of InGaAs self-assembled quantum dots are presented.


1998 ◽  
Vol 32 (11) ◽  
pp. 1229-1233 ◽  
Author(s):  
M. I. Vasilevskii ◽  
E. I. Akinkina ◽  
A. M. de Paula ◽  
E. V. Anda

1993 ◽  
Vol 47 (12) ◽  
pp. 7132-7139 ◽  
Author(s):  
Lavanya M. Ramaniah ◽  
Selvakumar V. Nair

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