Unusual Behavior Of Far-Infrared Magneto-Photoconduction In Electric Field For n-GaAs Near Metal-Insulator-Transition

2005 ◽  
Author(s):  
H. Kobori
Keyword(s):  
Electric Field ◽  
Far Infrared ◽  
Insulator Transition ◽  
Unusual Behavior ◽  
Metal Insulator Transition ◽  
Metal Insulator

Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation

Science ◽  
2013 ◽  
Vol 339 (6126) ◽  
pp. 1402-1405 ◽  
Author(s):  
J. Jeong ◽  
N. Aetukuri ◽  
T. Graf ◽  
T. D. Schladt ◽  
M. G. Samant ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Electric Field ◽  
Insulator Transition ◽  
Vacancy Formation ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Oxygen Vacancy Formation

scholarly journals Tuning of Metal–Insulator Transition of Quasi-Two-Dimensional Electrons at Parylene/SrTiO3 Interface by Electric Field

2009 ◽  
Vol 78 (8) ◽  
pp. 083713 ◽  
Author(s):  
Hiroyuki Nakamura ◽  
Hiroshi Tomita ◽  
Hikota Akimoto ◽  
Ryota Matsumura ◽  
Isao H. Inoue ◽  
...  
Keyword(s):  
Electric Field ◽  
Insulator Transition ◽  
Two Dimensional ◽  
Metal Insulator Transition ◽  
Metal Insulator

Electric field induced metal–insulator transition in VO 2 thin film based on FTO/VO 2 /FTO structure

2016 ◽  
Vol 75 ◽  
pp. 82-86 ◽  
Author(s):  
Rulong Hao ◽  
Yi Li ◽  
Fei Liu ◽  
Yao Sun ◽  
Jiayin Tang ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Investigation on the Electric-Field-Induced Metal-Insulator Transition in VoX-Based Devices

2011 ◽  
Vol 130-134 ◽  
pp. 1-4
Author(s):  
Qi Wang ◽  
Kai Liang Zhang ◽  
Fang Wang ◽  
Kai Song ◽  
Zhi Xiang Hu
Keyword(s):  
Electric Field ◽  
Resistance Switching ◽  
Insulator Transition ◽  
Resistive State ◽  
Emission Model ◽  
Device Structure ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Magnetic Sputtering

A sandwich device structure of MIM (metal/insulator/metal) is designed and its metal-insulator transition induced by an external electric field is investigated. VOxfilms were deposited on several different substrates by dc magnetic sputtering at room temperature. The device of Pt/VOx/Cu/Ti/SiO2/Si exhibited steady bipolar resistance switching behaviors between high resistive state (HRS) and low resistive state (LRS) with-0.4V/0.3V operation voltage (SET/RESET), while the devices of Pt/VOx/V/Cu/Ti/SiO2/Si, Pt/VOx/Al/Ti/SiO2/Si and Pt/VOx/Pt/Ti/SiO2/Si didn’t show this steady characteristic. From the comparison of these devices based on different substrates, the Schottky Emission model was quoted to explain this resistance switching characteristic in Pt/VOx/Cu/Ti/SiO2/Si device.

scholarly journals Far-infrared absorption in Sb-doped Ge epilayers near the metal–insulator transition

2002 ◽  
Vol 80 (19) ◽  
pp. 3536-3538 ◽  
Author(s):  
Jordana Bandaru ◽  
Jeffrey W. Beeman ◽  
Eugene E. Haller
Keyword(s):  
Infrared Absorption ◽  
Far Infrared ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator
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