Determination Of Piezo-Electric Fields In Spontaneously Ordered InGaAsP

2005 ◽  
Author(s):  
S. Krämer
Keyword(s):  
Electric Fields ◽  
Piezo Electric

Determination of the Internal Electric Field in the Electrooptic Active Layer of Multilayer Polymer Stacks

1997 ◽  
Vol 488 ◽  
Author(s):  
S. Grossmann ◽  
T. Weyrauch ◽  
W. Haase
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Time Dependent ◽  
Polymer Interfaces ◽  
Internal Electric Field ◽  
Inhomogeneous Distribution ◽  
Time Dependent Behaviour ◽  
Dependent Behaviour

AbstractWe report on a method to investigate the inhomogeneous distribution of an electric dc field in multilayer polymer stacks. In situ electroabsorption (EA) measurements are applied in order to estimate the local electric fields in double layer polymer films. The observed time dependent behaviour is compared with a model equivalent circuit. The results indicate that besides the relation of ohmic resistivities and capacities of the different polymer layers in the investigated systems also the influence of the electric properties of polymer/electrode and polymer/polymer interfaces must be considered.

scholarly journals A III B VI PHOTOVOLTAIC RECEPTORS FOR EXPERIMENTAL DETERMINATION OF CARBON COMPOUNDS IN ATMOSPHERE

2016 ◽  
Vol 19 (3) ◽  
Author(s):  
IULIANA CARAMAN ◽  
IGOR EVTODIEV ◽  
OXANA RACOVEŢ ◽  
MARIUS STAMATE
Keyword(s):  
Electric Fields ◽  
Full Range ◽  
Absorption Bands ◽  
Gaseous State ◽  
Wide Range ◽  
Carbon Compounds ◽  
Strong Electric Fields ◽  
Qualitative Measurements ◽  
Semiconductor Type

<p><span lang="EN-US">This paper examines the prospects of using semiconductor layered A<span class="apple-converted-space"> </span><sup>III</sup><span class="apple-converted-space"> </span>B<span class="apple-converted-space"> </span><sup>VI</sup><span class="apple-converted-space"> type -</span> photovoltaic cells<span class="apple-converted-space"> </span>and the photoresis<span class="apple-converted-space">tors</span> as receptors<span class="apple-converted-space"> </span>for quantitative and qualitative measurements of carbon oxides. Carbon compounds in gaseous state form absorption bands of<span class="apple-converted-space"> </span>electromagnetic<span class="apple-converted-space"> </span>radiation in a wide range of spectrum (200 ÷ 100 000) cm<sup>-1</sup>.<span class="apple-converted-space"> </span>The light absorbed<span class="apple-converted-space"> </span>or emitted<span class="apple-converted-space"> </span>in these bands <span class="apple-converted-space">at the</span> excitations with ionizing radiation (X, γ) or strong electric fields contain direct information about the<span class="apple-converted-space"> </span>concentration of these molecules.  The frequencies that<span class="apple-converted-space"> </span>correspond to maxima of these bands are characteristic parameters of absorbing molecules. Fundamental absorption bands of CO, CO<span class="apple-converted-space"> </span><sub>2</sub> and NC have the edge of band at the border of ultraviolet-vacuum, while the emission bands <em>d</em> cover their full range of wave numbers from 45000 cm<sup>-1 </sup>to 10000 cm<sup>-1</sup>. Two types of radiation receptors from lamellar semiconductor type A<sup>III</sup>B<sup>VI</sup><span class="apple-converted-space"> </span>photosensitive in this spectral range are studied.</span></p>

TEMPERATURE DEPENDENCE OF ELECTRICAL RESISTANCE OF INDIVIDUAL CARBON NANOTUBES AND CARBON NANOTUBES NETWORK

2012 ◽  
Vol 26 (21) ◽  
pp. 1250136 ◽  
Author(s):  
SAJJAD DEHGHANI ◽  
MOHAMMAD KAZEM MORAVVEJ-FARSHI ◽  
MOHAMMAD HOSSEIN SHEIKHI
Keyword(s):  
Carbon Nanotubes ◽  
Temperature Dependence ◽  
Electric Fields ◽  
Electrical Resistance ◽  
Electrode Materials ◽  
Effect Of Temperature ◽  
Electrode Spacing ◽  
Single Wall Carbon Nanotubes ◽  
Tube Metal

We present a model to understand the effect of temperature on the electrical resistance of individual semiconducting single wall carbon nanotubes (s-SWCNTs) of various diameters under various electric fields. The temperature dependence of the resistance of s-SWCNTs and metallic SWCNTs (m-SWCNTs) are compared. These results help us to understand the temperature dependence of the resistance of SWCNTs network. We experimentally examine the temperature dependence of the resistance of random networks of SWCNTs, prepared by dispersing CNTs in ethanol and drop-casting the solution on prefabricated metallic electrodes. Examining various samples with different electrode materials and spacings, we find that the dominant resistance in determination of the temperature dependence of resistance of the network is the resistance of individual tubes, rather than the tube–tube resistance or tube–metal contact resistance. It is also found that the tube–tube resistance depends on the electrode spacing and it is more important for larger electrode spacings. By applying high electric field to burn the all-metallic paths of the SWCNTs network, the temperature dependence of the resistance of s-SWCNTs is also examined. We also investigate the effect of acid treatment of CNTs on the temperature dependence of the resistance of SWCNTs and also multi-wall CNTs (MWCNTs) networks.

Determination of the Mobile-Hydrogen Charge State in Hydrogenated Amorphous Silicon

2001 ◽  
Vol 664 ◽  
Author(s):  
Brent P. Nelsona ◽  
Yueqin Xu ◽  
Robert C. Reedy ◽  
Richard S. Crandall ◽  
A. Harv Mahan ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Electric Fields ◽  
Correlation Energy ◽  
Hydrogen Charge ◽  
Hydrogenated Amorphous Silicon ◽  
Mobile Hydrogen ◽  
Almost All ◽  
Hydrogenated Amorphous ◽  
Best Fit

ABSTRACTWe find that hydrogen diffuses as H+, H0, or H- in hydrogenated amorphous silicon depending on its location within the i-layer of a p-i-n device. We annealed a set of five p-i-n devices, each with a thin deuterium-doped layer at a different location in the i-layer, and observed the D-diffusion using secondary ionmass spectrometry (SIMS). When H-diffuses in a charged state, electric fields in the device strongly influence the direction and distance of diffusion. When D is incorporated into a device near the p-layer, almost all of the D-diffusion occurs as D+, and when the D is incorporated near the n-layer, most of the D-diffusion occurs as D-. We correlate the preferential direction of D-motion at given depth within the i-layer, with the local Fermi level (as calculated by solar cell simulations), to empirically determine an effective correlation energy for mobile-H electronic transitions of 0.39 ± 0.1 eV. Using this procedure, the best fit to the data produces a disorder broadening of the transition levels of ∼0.25 eV. The midpoint between the H0/+ and the H0/- transition levels is ∼0.20 ± 0.05 eV above midgap.

scholarly journals The determination of the elastic moduli of the piezo-electric crystal Rochelle salt by a statical method

1927 ◽  
Vol 116 (775) ◽  
pp. 623-636 ◽  
Keyword(s):  
Composite Structure ◽  
Elastic Moduli ◽  
Electric Properties ◽  
Rochelle Salt ◽  
Piezo Electric

Rochelle salt owes its importance to the fact that it possesses piezo-electric properties which are much greater in magnitude than in the case of any other known Substance. Nicholson points out that whereas the larger of the two piezo-electric moduli of quartz is 0.0677 E. S. U. per kilogram, a usual value for Rochelle salt is 10 E. S. U., and this can be increased to 200 E. S. U. per kilogram for crystals grown in a special manner so as to develop what is known as a composite structure.

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