Carrier recombination and differential diode quality factors in the dark forward bias current-voltage characteristics of a‐Si:H solar cells

2005 ◽  
Vol 98 (2) ◽  
pp. 024509 ◽  
Author(s):  
J. Deng ◽  
C. R. Wronski
2005 ◽  
Vol 862 ◽  
Author(s):  
J. Deng ◽  
M. L. Albert ◽  
J. M. Pearce ◽  
R. W. Collins ◽  
C. R. Wronski

AbstractResults are presented on the defect state distributions in intrinsic a-Si:H layers with and without hydrogen dilution in p-i-n solar cells obtained directly from the analysis of dark forwardbias current-voltage (JD-V) characteristics. It is shown that there are distinct differences in the distributions of both native and light induced defect states between the two types of i-layers. Computer simulations using these distributions are presented which show excellent agreement with the experimental results not only for the JD-V but more importantly for the bias dependent differential diode quality factor n(V) characteristics. Results are also presented on the nature of the gap states and their evolution with light induced degradation as well as their effects on the performance and stability of high quality a-Si:H solar cells.


2016 ◽  
Vol 845 ◽  
pp. 224-227 ◽  
Author(s):  
Danila Saranin ◽  
Marina Orlova ◽  
Sergey Didenko ◽  
Oleg Rabinovich ◽  
Andrey Kryukov

This article presents the results of research output voltage characteristics of solar cells on an organic basis with the use of P3HT: PCBM system. There were produced organic solar cells in a coating in air, current-voltage characteristics were measured. It was determined the characteristic influence of a substrate cleaning and annealing temperature of layers applied on fill factor and conversion efficiency.


2016 ◽  
Vol 18 (22) ◽  
pp. 14970-14975 ◽  
Author(s):  
Teresa S. Ripolles ◽  
Ajay K. Baranwal ◽  
Koji Nishinaka ◽  
Yuhei Ogomi ◽  
Germà Garcia-Belmonte ◽  
...  

In this work, a new current peak at forward bias in the dark current–voltage curves has been identified for standard mesoscopic perovskite solar cells.


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