Surface roughness and dislocation distribution in compositionally graded relaxed SiGe buffer layer with inserted-strained Si layers

2005 ◽  
Vol 87 (1) ◽  
pp. 012104 ◽  
Author(s):  
Tae-Sik Yoon ◽  
Jian Liu ◽  
Atif M. Noori ◽  
Mark S. Goorsky ◽  
Ya-Hong Xie
Keyword(s):  
Surface Roughness ◽  
Buffer Layer ◽  
Strained Si ◽  
Dislocation Distribution

Effect of metal–oxide–semiconductor processing on the surface roughness of strained Si/SiGe material

2002 ◽  
Vol 92 (3) ◽  
pp. 1298-1306 ◽  
Author(s):  
S. H. Olsen ◽  
A. G. O’Neill ◽  
S. J. Bull ◽  
N. J. Woods ◽  
J. Zhang
Keyword(s):  
Surface Roughness ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Processing ◽  
Strained Si

Anisotropic Surface Roughness in Strain Relaxed In0.40GA0.60As on Gaas with a Step-Graded InxGA1-xAs Buffer Layer

1993 ◽  
Vol 312 ◽  
Author(s):  
J. C. P. Chang ◽  
B. K. Kad ◽  
S. R. Nutt ◽  
K. L. Kavanagh
Keyword(s):  
Electron Microscopy ◽  
Surface Roughness ◽  
Buffer Layer ◽  
Strain Relaxation ◽  
Phase Segregation ◽  
Periodic Variation ◽  
Cross Sectional ◽  
Anisotropic Surface ◽  
Transmission Electron ◽  
Plane Direction

AbstractWe report the structural characterization of the 3-D relaxation morphology of In0.4Ga0.6As grown on a step-graded InxGa1-xAs buffer layer on GaAs. Scanning electron microscopy showed “grooves” spaced on the order of microns running only in the [110] direction. Each groove was observed with cross-sectional transmission electron microscopy to mark the location of a vertical low-angle tilt and/or twist boundary. The veiy rough layer morphology may be the result of island coalescence or severe surface roughness that created the grain boudnaries as the layer grew. Strain relaxation in the In0.4Ga0.6As layer was much reduced in the [101] in-plane direction. The asymmetry in residual in-plane strains in the In0.3Ga0.7AS layer and/or the increased In composition may be responsible for the development of an anisotropic surface roughness. X-ray microanalysis revealed a periodic variation in layer composition which correlated with a fine contrast modulation presumably the result of phase segregation.

Buffer Layer Effects on the Structure and Morphology of SmCo/Cu Thin Films

2012 ◽  
Vol 476-478 ◽  
pp. 2415-2418
Author(s):  
Qi Ping Zhang ◽  
Qing Qing Fang ◽  
Wei Na Wang ◽  
Qing Rong Lv ◽  
Yan Mei Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetic Properties ◽  
Buffer Layer ◽  
Annealing Time ◽  
Buffer Layers ◽  
Cu Films ◽  
Structure And Morphology ◽  
Different Thickness

In this paper, we investigated the structure of SmCo films with different thickness and the effects of Cr buffer layer on the structure and morphology of SmCo/Cu thin films. Our data revealed that the magnetic properties of the samples were enhanced by the crystallization of SmCo which was promoted by the optimized Cu underlayers. We also found that the surface roughness can be decreased by Cr layer and the texture can be improved by prolonging the annealing time for thick SmCo film. Thus, we concluded that the magnetic properties of SmCo/Cu films can be further optimized by varying the thickness of Cr buffer layers.

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