scholarly journals Thermally activated carrier transfer processes in InGaN∕GaN multi-quantum-well light-emitting devices

2005 ◽  
Vol 98 (2) ◽  
pp. 023703 ◽  
Author(s):  
C. L. Yang ◽  
L. Ding ◽  
J. N. Wang ◽  
K. K. Fung ◽  
W. K. Ge ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Thermally Activated ◽  
Carrier Transfer ◽  
Transfer Processes ◽  
Multi Quantum Well

scholarly journals Molecular design of efficient yellow- to red-emissive alkynylgold(iii) complexes for the realization of thermally activated delayed fluorescence (TADF) and their applications in solution-processed organic light-emitting devices

2021 ◽  
Author(s):  
Cathay Chai Au-Yeung ◽  
Lok-Kwan Li ◽  
Man-Chung Tang ◽  
Shiu-Lun Lai ◽  
Wai-Lung Cheung ◽  
...  
Keyword(s):  
Molecular Design ◽  
Delayed Fluorescence ◽  
Solution Processed ◽  
Thermally Activated Delayed Fluorescence ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Thermally Activated ◽  
New Class ◽  
Organic Light ◽  
Tunable Emission

We report the design of a new class of fused heterocyclic alkynyl ligand-containing gold(iii) complexes, which shows tunable emission colors spanning yellow to red region and exhibits thermally activated delayed fluorescence (TADF) properties.

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

Optoelectronic Properties of Dual-wavelength InGaN/GaN Multi-quantum Well Light-emitting Diodes

2011 ◽  
Vol 40 (2) ◽  
pp. 190-193
Author(s):  
陈献文 CHEN Xian-wen ◽  
吴乾 WU Qian ◽  
李述体 LI Shu-ti ◽  
郑树文 ZHENG Shu-wen ◽  
何苗 HE Miao ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Optoelectronic Properties ◽  
Dual Wavelength ◽  
Light Emitting ◽  
Multi Quantum Well
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