Low-temperature preparation of highly (100)-oriented Pb(ZrxTi1−x)O3 thin film by high oxygen-pressure processing

2005 ◽  
Vol 86 (25) ◽  
pp. 252902 ◽  
Author(s):  
X. D. Zhang ◽  
X. J. Meng ◽  
J. L. Sun ◽  
T. Lin ◽  
J. H. Chu
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Oxygen Pressure ◽  
High Oxygen ◽  
High Oxygen Pressure ◽  
Low Temperature Preparation ◽  
Temperature Preparation

Low-temperature preparation of high-n TiO2 thin film on glass by pulsed laser deposition

2015 ◽  
Vol 347 ◽  
pp. 528-534 ◽  
Author(s):  
Akihiro Ishii ◽  
Yoko Nakamura ◽  
Itaru Oikawa ◽  
Atsunori Kamegawa ◽  
Hitoshi Takamura
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Tio2 Thin Film ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Low Temperature Preparation ◽  
Temperature Preparation

The alternative route of low-temperature preparation of highly oriented lead zirconate titanate thin films by high gas-pressure processing

2008 ◽  
Vol 23 (11) ◽  
pp. 2846-2853 ◽  
Author(s):  
X.D. Zhang ◽  
X.J. Meng ◽  
J.L. Sun ◽  
T. Lin ◽  
J.H. Ma ◽  
...  
Keyword(s):  
Low Temperature ◽  
Lead Zirconate Titanate ◽  
Perovskite Structure ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
High Oxygen Pressure ◽  
Low Temperature Preparation ◽  
Pzt Films ◽  
Sputter Deposited ◽  
Temperature Preparation

The Pb(ZrxTi1–x)O3(PZT) films sputter deposited on LaNiO3(LNO)/Si(100) substrates were recrystallized to highly (l00)-oriented perovskite structure by high oxygen-pressure processing (HOPP) and high argon-pressure processing (HAPP), which were performed at a relatively low temperature 400 °C compared to the normally required temperature condition above 600 °C. Ferroelectricity of PZT films was investigated by a measurement of P-E hysteresis loop. The P-E hysteresis loops of the PZT(52/48) and PZT(30/70) films after HOPP showed better squareness and larger remnant polarization than those of as-sputtered ones prepared at a high temperature of 600 °C. Although the PZT films with HAPP also showed a high (l00)-oriented perovskite structure and obvious ferroelectricity, their P-E loops suggested relatively poor ferroelectricity compared to those of the PZT films with HOPP. This means that a further optimization for HAPP is needed to improve ferroelectricity of PZT films.

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