Band structure modification of Al oxide by Ti-alloying and magnetoresistance behavior of magnetic tunnel junctions with Ti-alloyed Al oxide barrier

2005 ◽  
Vol 86 (25) ◽  
pp. 252501 ◽  
Author(s):  
Jin-Oh Song ◽  
Seong-Rae Lee ◽  
Hyun-Joon Shin
Keyword(s):  
Band Structure ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Structure Modification ◽  
Oxide Barrier ◽  
Al Oxide

Half-metallic band structure observed in Co2MnSi-based magnetic tunnel junctions

2007 ◽  
Vol 40 (5) ◽  
pp. 1221-1227 ◽  
Author(s):  
Y Sakuraba ◽  
M Hattori ◽  
M Oogane ◽  
H Kubota ◽  
Y Ando ◽  
...  
Keyword(s):  
Band Structure ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Half Metallic

Switching-Field Stabilization against Effects of High-Temperature Annealing in Magnetic Tunnel Junctions using Thermally Reliable NixFe100-x/Al-Oxide/Ta Free Layer

2006 ◽  
Vol 45 (5A) ◽  
pp. 3829-3834 ◽  
Author(s):  
Yoshiyuki Fukumoto ◽  
Hideaki Numata ◽  
Katsumi Suemitsu ◽  
Kiyokazu Nagahara ◽  
Norikazu Ohshima ◽  
...  
Keyword(s):  
High Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
High Temperature Annealing ◽  
Free Layer ◽  
Switching Field ◽  
Al Oxide

scholarly journals Band Structure and Density of States Effects in Co-Based Magnetic Tunnel Junctions

2002 ◽  
Vol 88 (10) ◽  
Author(s):  
P. LeClair ◽  
J. T. Kohlhepp ◽  
C. H. van de Vin ◽  
H. Wieldraaijer ◽  
H. J. M. Swagten ◽  
...  
Keyword(s):  
Band Structure ◽  
Density Of States ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions

Hrem Characterization of Magnetic Tunnel Junctions and Discontinuous Multilayers

1998 ◽  
Vol 4 (S2) ◽  
pp. 798-799
Author(s):  
David J. Smith ◽  
Fuding Ge ◽  
C.L. Piatt ◽  
S. Sankar ◽  
A.E. Berkowitz
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Cross Sectional ◽  
Metal Insulator ◽  
Magnetic Layers ◽  
Magnetic Metal ◽  
Oxide Barrier ◽  
Metal Layers

There is much current interest in the magnetotransport properties of systems consisting of two (or more) magnetic metal layers separated by thin insulating layers. Traditional magnetic tunnel junctions (MTJs) are comprised of simple ferromagnet-insulator-ferromagnet trilayer structures and the conductance depends on the relative alignments of the magnetizations in the two ferromagnets. In the case of discontinuous metal/insulator multilayers, negative magnetoresistance (MR) results from spindependent tunneling. In both types of systems, the tunneling phenomena are strongly influenced by the microstructure of the films, particularly the metal/insulator interfaces and the nature and uniformity of the thin oxide barrier layers. In this study, we have used cross-sectional HREM to characterize a variety of magnetic tunnel junctions and discontinuous multilayers.The MTJs were prepared by rf and dc magnetron sputtering onto thermally oxidized (100) silicon wafers at room temperature. The magnetic layers consisted of thin films of Co, Fe and/or CoFe alloys with thicknesses ∼ 30-50nm, and the barriers included MgO, HfO2, CoO, SiO2 as well as Al2O3 (thicknesses in the range 2-10nm).

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