Noise suppression of a differential detector under high levels of illumination, relevant to terahertz electro-optic sampling

2005 ◽  
Vol 76 (7) ◽  
pp. 073104
Author(s):  
N. C. J. van der Valk ◽  
R. N. Schouten ◽  
P. C. M. Planken
Keyword(s):  
Noise Suppression ◽  
Electro Optic

Noise suppression in Ti:sapphire laser-based electro-optic sampling

1999 ◽  
Vol 75 (22) ◽  
pp. 3446-3448 ◽  
Author(s):  
J. M. Zhang ◽  
R. L. Ruo ◽  
M. K. Jackson
Keyword(s):  
Noise Suppression ◽  
Ti:Sapphire Laser ◽  
Electro Optic

Frequency Noise Suppression of a Dye Laser Based on Intracavity Electro-Optic Modulator

2013 ◽  
Vol 40 (5) ◽  
pp. 0517001
Author(s):  
刘芳 Liu Fang ◽  
王春 Wang Chun ◽  
李刘锋 Li Liufeng ◽  
陈李生 Chen Lisheng
Keyword(s):  
Noise Suppression ◽  
Dye Laser ◽  
Frequency Noise ◽  
Electro Optic ◽  
Electro Optic Modulator

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

Sign in / Sign up

Export Citation Format

Share Document