Structural transformation of SbxSe100−x thin films for phase change nonvolatile memory applications

2005 ◽  
Vol 98 (1) ◽  
pp. 014904 ◽  
Author(s):  
M. J. Kang ◽  
S. Y. Choi ◽  
D. Wamwangi ◽  
K. Wang ◽  
C. Steimer ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Structural Transformation ◽  
Nonvolatile Memory ◽  
Memory Applications

The physical and electrical characterizations of Cr-doped BiFeO3 ferroelectric thin films for nonvolatile memory applications

2015 ◽  
Vol 138 ◽  
pp. 86-90 ◽  
Author(s):  
Pi-Chun Juan ◽  
Jyh-Liang Wang ◽  
Tsang-Yen Hsieh ◽  
Cheng-Li Lin ◽  
Chia-Ming Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Nonvolatile Memory ◽  
Ferroelectric Thin Films ◽  
Memory Applications ◽  
Electrical Characterizations

Ti x Sb 2 Te Thin Films for Phase Change Memory Applications

2014 ◽  
Vol 31 (7) ◽  
pp. 078503
Author(s):  
Shi-Yu Tang ◽  
Run Li ◽  
Xin Ou ◽  
Han-Ni Xu ◽  
Yi-Dong Xia ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Applications ◽  
Change Memory

Effect of Deposition Temperature on I-V Characteristics of Vanadium Oxide Film

2012 ◽  
Author(s):  
X. Y. Wei ◽  
M. Hu ◽  
F. Wang ◽  
J. Wei ◽  
K. L. Zhang
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Photoelectron Spectroscopy ◽  
Nonvolatile Memory ◽  
Semiconductor Device ◽  
Oxide Thin Film ◽  
Reset Voltage ◽  
Switching Characteristics ◽  
Vanadium Oxide Thin Films ◽  
Memory Applications

In this paper, the effects of deposition temperatures on the resistive switching characteristics of polycrystalline vanadium oxide thin films have been investigated. VOx thin films were prepared by reactive sputtering at various deposition temperatures (RT, 250 °C, 350 °C, and 450 °C, respectively). X-ray photoelectron spectroscopy revealed the compositions of VOx thin films. Electrical switching has been observed in Cu(tip)/VOx/Cu memory units by Semiconductor Device Analyzer. Crystalline characterizations revealed that as-deposited (RT) film was amorphous, the films crystallized into different phases (e.g. VO2, V2O5, VO1.86 etc.) with increasing the deposition temperatures. The VOx memory units have low Vset and Vreset. Furthermore, their set voltage decreased from 1.52 V to 0.45 V and reset voltage decreased from 1.01 V to 0.41 V with increasing the deposition temperatures from 250 °C to 450 °C, respectively. The thin films have three orders of change in resistivity between ON-state and OFF-state except as-deposited film. The vanadium oxide thin film can be a promising material for low power nonvolatile memory applications.

Preparation and characterization of GeTe4 thin films as a candidate for phase change memory applications

2011 ◽  
Vol 109 (6) ◽  
pp. 066104 ◽  
Author(s):  
Hao Jiang ◽  
Kang Guo ◽  
Hanni Xu ◽  
Yidong Xia ◽  
Kun Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Applications ◽  
Change Memory

Investigation of multilayer SnSb4/ZnSb thin films for phase change memory applications

2017 ◽  
Vol 10 (5) ◽  
pp. 055504 ◽  
Author(s):  
Zifang He ◽  
Shiyu Chen ◽  
Weihua Wu ◽  
Jiwei Zhai ◽  
Sannian Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Applications ◽  
Change Memory

Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications

Nano Letters ◽  
2010 ◽  
Vol 10 (11) ◽  
pp. 4381-4386 ◽  
Author(s):  
Hu Young Jeong ◽  
Jong Yun Kim ◽  
Jeong Won Kim ◽  
Jin Ok Hwang ◽  
Ji-Eun Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Graphene Oxide ◽  
Nonvolatile Memory ◽  
Oxide Thin Films ◽  
Memory Applications
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