Polarization-switching characteristics of flux-grown KTiOPO4 and RbTiOPO4 at room temperature

2005 ◽  
Vol 97 (12) ◽  
pp. 124105 ◽  
Author(s):  
C. Canalias ◽  
J. Hirohashi ◽  
V. Pasiskevicius ◽  
F. Laurell
Keyword(s):  
Room Temperature ◽  
Polarization Switching ◽  
Switching Characteristics

Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs

2006 ◽  
Vol 527-529 ◽  
pp. 1261-1264 ◽  
Author(s):  
Sei Hyung Ryu ◽  
Sumi Krishnaswami ◽  
Brett A. Hull ◽  
Bradley Heath ◽  
Mrinal K. Das ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Gate Length ◽  
Gate Bias ◽  
Low Loss ◽  
Layer Resistance ◽  
Switching Characteristics ◽  
Mos Gate ◽  
Drift Layer

8 mΩ-cm2, 1.8 kV power DMOSFETs in 4H-SiC are presented in this paper. A 0.5 μm long MOS gate length was used to minimize the MOS channel resistance. The DMOSFETs were able to block 1.8 kV with the gate shorted to the source. At room temperature, a specific onresistance of 8 mΩ-cm2 was measured with a gate bias of 15 V. At 150 oC, the specific onresistance increased to 9.6 mΩ-cm2. The increase in drift layer resistance due to a decrease in bulk electron mobility was partly cancelled out by the negative shift in MOS threshold voltage at elevated temperatures. The device demonstrated extremely fast, low loss switching characteristics. A significant improvement in converter efficiency was observed when the 4H-SiC DMOSFET was used instead of an 800 V silicon superjunction MOSFET in a simple boost converter configuration.

Anomalous Polarization Switching Characteristics in a Ferroelectric Heterostructure

2017 ◽  
Vol 255 (3) ◽  
pp. 1700371 ◽  
Author(s):  
Lian Cui ◽  
Fenghui Cao ◽  
Haiying Cui ◽  
Yuchun Li ◽  
Rui Yang
Keyword(s):  
Polarization Switching ◽  
Switching Characteristics ◽  
Anomalous Polarization

Polarization switching characteristics in a 1550??nm VCSEL subject to circularly polarized optical injection

2016 ◽  
Vol 14 (2) ◽  
pp. 021401-21405 ◽  
Author(s):  
Haiying Qiu Haiying Qiu ◽  
Zhengmao Wu Zhengmao Wu ◽  
Tao Deng Tao Deng ◽  
Yang He Yang He ◽  
and Guangqiong Xia and Guangqiong Xia
Keyword(s):  
Polarization Switching ◽  
Optical Injection ◽  
Circularly Polarized ◽  
Switching Characteristics

Above room-temperature dielectric and nonlinear optical switching materials based on [(CH3)3S]2[MBr4] (M = Cd, Mn and Zn)

2019 ◽  
Vol 48 (30) ◽  
pp. 11292-11297 ◽  
Author(s):  
Xiao-Gang Chen ◽  
Yao-Zu Zhang ◽  
Dong-Sheng Sun ◽  
Ji-Xing Gao ◽  
Xiu-Ni Hua ◽  
...  
Keyword(s):  
Optical Switching ◽  
Nonlinear Optical ◽  
Room Temperature ◽  
Inorganic Hybrid ◽  
Hybrid Compounds ◽  
Switching Characteristics

Three organic–inorganic hybrid compounds based on [Me3S]+ cations exhibit sensitive dielectric and nonlinear optical switching characteristics above room temperature.

Unipolar resistive switching characteristics of room temperature grown SnO2 thin films

2009 ◽  
Vol 94 (24) ◽  
pp. 242902 ◽  
Author(s):  
Kazuki Nagashima ◽  
Takeshi Yanagida ◽  
Keisuke Oka ◽  
Tomoji Kawai
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Room Temperature ◽  
Sno2 Thin Films ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

Giant room temperature elastocaloric effect of PbTiO3 ferroelectric materials with 90° domain structure

RSC Advances ◽  
2016 ◽  
Vol 6 (74) ◽  
pp. 70557-70562 ◽  
Author(s):  
F. Wang ◽  
B. Li ◽  
Y. Ou ◽  
L. F. Liu ◽  
C. Z. Peng ◽  
...  
Keyword(s):  
Stress Field ◽  
Domain Structure ◽  
Applied Stress ◽  
Room Temperature ◽  
Polarization Switching ◽  
Ferroelectric Materials ◽  
Stress Fields ◽  
Elastocaloric Effect

The elastocaloric effect in PbTiO3 with 90° domain structure under the applied stress field at room temperature has been studied. A negative ΔTσ of −7.2 K can be obtained by controlled polarization switching under the applied stress fields.

Recombination Processes in 4H-SiC pn Structures

2016 ◽  
Vol 858 ◽  
pp. 345-348 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Baptiste Berenguier ◽  
Eugene B. Yakimov ◽  
Laurent Ottaviani
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Diffusion Length ◽  
Induced Current ◽  
Donor Concentration ◽  
Reverse Voltage ◽  
Recombination Processes ◽  
Electron Beam Induced Current ◽  
Switching Characteristics ◽  
Hole Diffusion Length

Commercial 4H-SiC p+n structures with an uncompensated donor concentration (Nd-Na) of ~1.5∙1015 cm-3 in the n-type epitaxial layer are studied. The measurement of the photocurrent, electron beam induced current and transient switching characteristics (from forward to reverse voltage), altogether showed that the value of the hole diffusion length, about 2 μm at room temperature, increases to at least 7 μm at 620 K.

1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)

2011 ◽  
Vol 679-680 ◽  
pp. 607-612 ◽  
Author(s):  
Hiroshi Kono ◽  
Takuma Suzuki ◽  
Kazuto Takao ◽  
Masaru Furukawa ◽  
Makoto Mizukami ◽  
...  
Keyword(s):  
Room Temperature ◽  
Dielectric Breakdown ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Gate Bias ◽  
Drain Voltage ◽  
Mos Capacitor ◽  
Time Dependent Dielectric Breakdown ◽  
Blocking Voltage ◽  
Switching Characteristics

1.2 mm × 1.2 mm and 2.7 mm × 2.7 mm silicon carbide double-implanted metal-oxide-semiconductor field-effect transistors (DIMOSFETs) were fabricated on 4H-SiC (000-1) carbon face. 1.2 mm × 1.2 mm DIMOSFETs were characterized from room temperature to 150°C. At room temperature, the specific on-resistance of this MOSFET was 5.7 mΩcm2 at a gate bias of 20 V and a drain voltage of 1.0 V. The blocking voltage of this MOSFET was 1450 V based on the avalanche current. At 150 °C, the specific on-resistance increased from 5.7 mΩcm2 to 9.1 mΩcm2 and the threshold voltage decreased from 4.9 V to 4.1 V. The blocking voltage increased from 1450V to 1500V. 2.7 mm × 2.7 mm DIMOSFETs were also characterized at room temperature. They showed a specific on-resistance of 8.0 mΩcm2 at a gate bias of 20 V and a drain voltage of 1 V. The blocking voltage of this device was 1550 V, which was determined by the avalanche current. The time-zero dielectric breakdown (TZDB) and time-dependent dielectric breakdown (TDDB) characteristics of 180 μm × 180 μm MOS capacitor were estimated. At room temperature (RT), TZDB was 9.3 MV/cm and the charge to breakdown value of 63% cumulative failure (Qbd) was 72 C/cm2. The temperature dependence of Qbd measurements showed that it deceased from 72 C/cm2 at RT to 14 C/cm2 at 250 °C. Switching characteristics of 1.2 mm × 1.2 mm DIMOSFETs were obtained by the double-pulse measurements. The turn-on time and the turn-off time were 36 nsec and 53 nsec, respectively.

scholarly journals Reliable polarization switching of BiFeO 3

2012 ◽  
Vol 370 (1977) ◽  
pp. 4872-4889 ◽  
Author(s):  
S. H. Baek ◽  
C. B. Eom
Keyword(s):  
Electric Field ◽  
Room Temperature ◽  
Remanent Polarization ◽  
Magnetic Ordering ◽  
Polarization Switching ◽  
Ferroelectric Materials ◽  
Promising Candidate ◽  
Switching Path ◽  
Ferroelectric Memory ◽  
Rhombohedral Symmetry

As a room temperature multi-ferroic with coexisting anti-ferromagnetic, ferroelectric and ferroelastic orders, BiFeO 3 has been extensively studied to realize magnetoelectric devices that enable manipulation of magnetic ordering by an electric field. Moreover, BiFeO 3 is a promising candidate for ferroelectric memory devices because it has the largest remanent polarization ( P r >100 μC cm −2 ) of all ferroelectric materials. For these applications, controlling polarization switching by an electric field plays a crucial role. However, BiFeO 3 has a complex switching behaviour owing to the rhombohedral symmetry: ferroelastic (71 ° , 109 ° ) and ferroelectric (180 ° ) switching. Furthermore, the polarization is switched through a multi-step process: 180 ° switching occurs through three sequential 71 ° switching steps. By using monodomain BiFeO 3 thin-film heterostructures, we correlated such multi-step switching to the macroscopically observed reliability issues of potential devices such as retention and fatigue. We overcame the retention problem (i.e. elastic back-switching of the 71 ° switched area) using monodomain BiFeO 3 islands. Furthermore, we suppressed the fatigue problem of 180 ° switching, i.e. loss of switchable polarization with switching cycles, using a single 71 ° switching path. Our results provide a framework for exploring a route to reliably control multiple-order parameters coupled to ferroelastic order in other rhombohedral and lower-symmetry materials.

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