Effect of compressive strain relaxation in GaN blue light-emitting diodes with variation of n+‐GaN thickness on its device performance

2005 ◽  
Vol 87 (1) ◽  
pp. 013502 ◽  
Author(s):  
Chi Sun Kim ◽  
Hyung Gu Kim ◽  
Chang-Hee Hong ◽  
Hyung Koun Cho
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Strain Relaxation ◽  
Compressive Strain ◽  
Device Performance ◽  
Light Emitting

Chloride-incorporated quasi-2D perovskite films via a dynamic processing for spectra-stable blue light-emitting diodes

2021 ◽  
Author(s):  
Jing Chen ◽  
Yan Jin ◽  
Yanhui Lou ◽  
Shuai Yuan ◽  
Yu-Hang Zhou ◽  
...  
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Rapid Development ◽  
Device Performance ◽  
Light Emitting ◽  
Dynamic Processing

Compared with the rapid development of red and green perovskite light-emitting diodes (PeLEDs), the improvement of the device performance is urgent for blue PeLEDs. Herein, we developed a creative method...

Efficient All-inorganic Perovskite Light-emitting Diodes Enabled by Manipulating Crystal Orientation

2021 ◽  
Author(s):  
Wenjing Feng ◽  
Kebin Lin ◽  
Wenqiang Li ◽  
Xiangtian Xiao ◽  
Jianxun Lu ◽  
...  
Keyword(s):  
Active Layer ◽  
Crystal Orientation ◽  
Light Emitting Diodes ◽  
Metal Halide ◽  
Device Performance ◽  
Light Emitting ◽  
Inorganic Perovskite ◽  
Metal Halide Perovskite ◽  
Halide Perovskite

Metal halide perovskite light-emitting diodes (PeLEDs) are promising in lighting and display application, and the corresponding device performance is highly dependent on the film quality of the active layer. However,...

scholarly journals Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH3 Growth Interruption

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 399
Author(s):  
Sang-Jo Kim ◽  
Semi Oh ◽  
Kwang-Jae Lee ◽  
Sohyeon Kim ◽  
Kyoung-Kook Kim
Keyword(s):  
Buffer Layer ◽  
Light Emitting Diodes ◽  
Defect Density ◽  
Strain Relaxation ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Growth Interruption ◽  
Aln Buffer

We demonstrate the highly efficient, GaN-based, multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrates embedded with the AlN buffer layer using NH3 growth interruption. Analysis of the materials by the X-ray diffraction omega scan and transmission electron microscopy revealed a remarkable improvement in the crystalline quality of the GaN layer with the AlN buffer layer using NH3 growth interruption. This improvement originated from the decreased dislocation densities and coalescence-related defects of the GaN layer that arose from the increased Al migration time. The photoluminescence peak positions and Raman spectra indicate that the internal tensile strain of the GaN layer is effectively relaxed without generating cracks. The LEDs embedded with an AlN buffer layer using NH3 growth interruption at 300 mA exhibited 40.9% higher light output power than that of the reference LED embedded with the AlN buffer layer without NH3 growth interruption. These high performances are attributed to an increased radiative recombination rate owing to the low defect density and strain relaxation in the GaN epilayer.

Blue light-emitting diodes in hair regrowth: the first prospective study

2021 ◽  
Author(s):  
G. Lodi ◽  
M. Sannino ◽  
G. Cannarozzo ◽  
A. Giudice ◽  
E. Del Duca ◽  
...  
Keyword(s):  
Prospective Study ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Hair Regrowth

scholarly journals Air stable and highly efficient Bi3+-doped Cs2SnCl6 for blue light-emitting diodes

RSC Advances ◽  
2021 ◽  
Vol 11 (42) ◽  
pp. 26415-26420
Author(s):  
Yue Yao ◽  
Si-Wei Zhang ◽  
Zijian Liu ◽  
Chun-Yun Wang ◽  
Ping Liu ◽  
...  
Keyword(s):  
Quantum Yield ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Color Coordinates ◽  
Blue Led ◽  
Highly Efficient ◽  
Photoluminescence Quantum Yield ◽  
Long Life

A Bi3+-doped Cs2SnCl6 exhibits photoluminescence at around 456 nm and a photoluminescence quantum yield of 31%. The blue LED based on the Bi3+-doped Cs2SnCl6 phosphor exhibits a long life of 120 hours and a CIE color coordinates of (0.14, 0.11).

scholarly journals Device Modeling of Quantum Dot–Organic Light Emitting Diodes for High Green Color Purity

2021 ◽  
Vol 11 (6) ◽  
pp. 2828
Author(s):  
Byoung-Seong Jeong
Keyword(s):  
Quantum Dot ◽  
Emission Spectrum ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Color Purity ◽  
Wavelength Band ◽  
Light Emitting ◽  
Green Color ◽  
Organic Light

In this study, the optimal structure for obtaining high green color purity was investigated by modeling quantum dot (QD)–organic light-emitting diodes (OLED). It was found that even if the green quantum dot (G-QD) density in the G-QD layer was 30%, the full width at half maximum (FWHM) in the green wavelength band could be minimized to achieve a sharp emission spectrum, but it was difficult to completely block the blue light leakage with the G-QD layer alone. This blue light leakage problem was solved by stacking a green color filter (G-CF) layer on top of the G-QD layer. When G-CF thickness 5 μm was stacked, blue light leakage was blocked completely, and the FWHM of the emission spectrum in the green wavelength band was minimized, resulting in high green color purity. It is expected that the overall color gamut of QD-OLED can be improved by optimizing the device that shows such excellent green color purity.

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