Magnetoelectric effect in hybrid magnetostrictive-piezoelectric composites in the electromechanical resonance region

2005 ◽  
Vol 97 (11) ◽  
pp. 113910 ◽  
Author(s):  
D. A. Filippov ◽  
M. I. Bichurin ◽  
C. W. Nan ◽  
J. M. Liu
Keyword(s):  
Magnetoelectric Effect ◽  
Resonance Region ◽  
Piezoelectric Composites ◽  
Electromechanical Resonance

scholarly journals Особенности магнитоэлектрического эффекта в структурах пермендюр-кварц-пермендюр в области электромеханического резонанса

2019 ◽  
Vol 45 (9) ◽  
pp. 16
Author(s):  
В.М. Лалетин ◽  
Д.А. Филиппов ◽  
Н.Н. Поддубная ◽  
И.Н. Маничева ◽  
G. Srinivasan
Keyword(s):  
Lead Zirconate Titanate ◽  
Magnetoelectric Effect ◽  
Resonance Region ◽  
Lead Zirconate ◽  
Anomalous Behavior ◽  
Q Factor ◽  
Experimental Frequency ◽  
Voltage Coefficient ◽  
Zirconate Titanate ◽  
Electromechanical Resonance

AbstractThe experimental frequency and field dependences of the magnetoelectric effect in three-layer permendur–quartz–permendur structures in the region of electromechanical resonance were studied. It was found that the magnetoelectric voltage coefficient and the Q-factor of these structures in the resonance region are much higher than those of similar structures based on lead zirconate titanate. Anomalous behavior of the field dependences of the magnetoelectric voltage coefficient and the Q-factor was observed in the region of electromechanical resonance. This feature is attributable to the negative Δ E effect.

Magnetoelectric Effect in Ferrite-Piezoelectric Dual-Phase Structure

2015 ◽  
Vol 233-234 ◽  
pp. 353-356
Author(s):  
Roman V. Petrov ◽  
Alexander S. Tatarenko ◽  
Vladimir M. Petrov ◽  
Mirza I. Bichurin
Keyword(s):  
Energy Transfer ◽  
Lead Zirconate Titanate ◽  
Magnetoelectric Effect ◽  
Resonance Region ◽  
Lead Zirconate ◽  
Dual Phase ◽  
Theoretical Frequency ◽  
Voltage Coefficient ◽  
Piezoelectric Structure ◽  
Electromechanical Resonance

This manuscript is devoted to the magnetoelectric coupling in a dimensionally graded magnetostrictive-piezoelectric structure in the electromechanical resonance region. Theoretical frequency dependence of ME voltage coefficient is obtained. Theoretical estimates for the layered structure of lead zirconate-titanate and single-crystal Zn0,3Ni0,7Fe2O4 are in satisfactory agreement with data. The obtained results are expected to facilitate observation of enhanced ME coupling at overlapping of electromechanical and magnetic resonance due to energy transfer between spin waves and phonons.

Specific Features of the Magnetoelectric Effect in Permendur–Quartz–Permendur Structures in the Region of Electromechanical Resonance

2019 ◽  
Vol 45 (5) ◽  
pp. 436-438 ◽  
Author(s):  
V. M. Laletin ◽  
D. A. Filippov ◽  
N. N. Poddubnaya ◽  
I. N. Manicheva ◽  
G. Srinivasan
Keyword(s):  
Magnetoelectric Effect ◽  
Electromechanical Resonance

scholarly journals Theoretical model for geometry-dependent magnetoelectric effect in magnetostrictive/piezoelectric composites

2012 ◽  
Vol 111 (12) ◽  
pp. 124513 ◽  
Author(s):  
Yaojin Wang ◽  
Davresh Hasanyan ◽  
Menghui Li ◽  
Junqi Gao ◽  
Jiefang Li ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Magnetoelectric Effect ◽  
Piezoelectric Composites

scholarly journals Comparative theoretical study of the resonance frequencies of the longitudinal-shear and torsion modes of the magnetoelectric effect in a two-layer magnetostrictive-piezoelectric structure Metglas / GaAs

2021 ◽  
Vol 2052 (1) ◽  
pp. 012042
Author(s):  
O V Sokolov ◽  
M I Bichurin ◽  
V S Leontiev
Keyword(s):  
Magnetoelectric Effect ◽  
Theoretical Study ◽  
Longitudinal Shear ◽  
Shear Mode ◽  
Torsional Mode ◽  
Resonance Frequencies ◽  
Piezoelectric Structure ◽  
Electromechanical Resonance

Abstract The article is devoted to a comparative theoretical study of the frequencies of the electromechanical resonance (EMR) of the magnetoelectric (ME) effect in the magnetostrictive-piezosemiconductor structure Metglas / GaAs of the longitudinal-shear and torsional modes. It is found that the resonance frequencies for the torsional mode are approximately 2 times higher than the corresponding frequencies for the longitudinal-shear mode. Therefore, it is quite possible to observe the torsional mode of the ME effect against the background of the longitudinal-shear mode, since the resonance frequencies are well distinguishable. The results obtained can find application in the construction of new ME devices.

scholarly journals Self-Biased Bidomain LiNbO3/Ni/Metglas Magnetoelectric Current Sensor

Sensors ◽  
2020 ◽  
Vol 20 (24) ◽  
pp. 7142
Author(s):  
Mirza I. Bichurin ◽  
Roman V. Petrov ◽  
Viktor S. Leontiev ◽  
Oleg V. Sokolov ◽  
Andrei V. Turutin ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Lithium Niobate ◽  
Resonance Region ◽  
Current Sensor ◽  
Bias Magnetic Field ◽  
Piezoelectric Composites ◽  
Current Consumption ◽  
Bending Mode ◽  
Increased Sensitivity ◽  
Working Characteristic

The article is devoted to the theoretical and experimental study of a magnetoelectric (ME) current sensor based on a gradient structure. It is known that the use of gradient structures in magnetostrictive-piezoelectric composites makes it possible to create a self-biased structure by replacing an external magnetic field with an internal one, which significantly reduces the weight, power consumption and dimensions of the device. Current sensors based on a gradient bidomain structure LiNbO3 (LN)/Ni/Metglas with the following layer thicknesses: lithium niobate—500 μm, nickel—10 μm, Metglas—29 μm, operate on a linear section of the working characteristic and do not require the bias magnetic field. The main characteristics of a contactless ME current sensor: its current range measures up to 10 A, it has a sensitivity of 0.9 V/A, its current consumption is not more than 2.5 mA, and its linearity is maintained to an accuracy of 99.8%. Some additional advantages of a bidomain lithium niobate-based current sensor are the increased sensitivity of the device due to the use of the bending mode in the electromechanical resonance region and the absence of a lead component in the device.

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