Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification

2005 ◽  
Vol 86 (19) ◽  
pp. 191910 ◽  
Author(s):  
Rong Chen ◽  
Hyoungsub Kim ◽  
Paul C. McIntyre ◽  
David W. Porter ◽  
Stacey F. Bent
2006 ◽  
Vol 917 ◽  
Author(s):  
Rong Chen ◽  
David W. Porter ◽  
Hyoungsub Kim ◽  
Paul C. McIntyre ◽  
Stacey F. Bent

AbstractArea selective HfO2 thin film growth through atomic layer deposition (ALD) has been achieved on octadecyltrichlorosilane (ODTS) patterned Si substrates. Patterned hydrophobic self-assembled monolayers (SAMs) were first transferred to Si substrates by micro-contact printing. Using hafnium-tetrachloride or tetrakis(dimethylamido) hafnium(IV) and water as ALD precursors, amorphous HfO2 layers were then grown selectively on the SAM-free regions of the surface where native hydroxyl groups nucleate growth from the vapor phase. The HfO2 pattern was readily observed through scanning electron microscopy and scanning Auger imaging, demonstrating that soft lithography is a simple and promising method to achieve area selective ALD. To evaluate the selectivity, the resolution of the soft lithography based method was compared with that of area selective ALD of HfO2 by selective surface modification of patterned silicon oxide obtained using long-time SAM exposure. It was found that the selective surface modification showed much higher spatial resolution and selectivity, an observation consistent with previous studies indicating that highly ordered and densely packed ODTS films were important to achieve complete deactivation.


2011 ◽  
Vol 11 (8) ◽  
pp. 7322-7326 ◽  
Author(s):  
Hyun Ae Lee ◽  
Young-Chul Byun ◽  
Umesh Singh ◽  
Hyoung J. Cho ◽  
Hyoungsub Kim

2021 ◽  
Vol 9 (37) ◽  
pp. 21132-21141
Author(s):  
T. Kavinkumar ◽  
Selvaraj Seenivasan ◽  
Hyeonjung Jung ◽  
Jeong Woo Han ◽  
Do-Heyoung Kim

A synergistic strategy of interface engineering and surface modification is efficient to construct a promising bifunctional electrocatalyst for enhanced electrocatalytic water splitting.


2019 ◽  
Vol 23 (11) ◽  
pp. 2362-2368 ◽  
Author(s):  
Cosima Hirschberg ◽  
Nikolaj Sølvkær Jensen ◽  
Johan Boetker ◽  
Anders Østergaard Madsen ◽  
Tommi O. Kääriäinen ◽  
...  

2021 ◽  
Author(s):  
Jerome W. F. Innocent ◽  
Mari Napari ◽  
Andrew L. Johnson ◽  
Thom R. Harris-Lee ◽  
Miriam Regue ◽  
...  

Here we report the development of a new scalable and transferable plasma assisted atomic layer deposition (PEALD) process for the production of uniform, conformal and pinhole free NiO with sub-nanometre control on a commercial ALD reactor.


MRS Bulletin ◽  
2011 ◽  
Vol 36 (11) ◽  
pp. 887-897 ◽  
Author(s):  
Changdeuck Bae ◽  
Hyunjung Shin ◽  
Kornelius Nielsch

Abstract


Catalysts ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1298
Author(s):  
Xiaofeng Wang ◽  
Zhe Zhao ◽  
Chengcheng Zhang ◽  
Qingbo Li ◽  
Xinhua Liang

In recent years, atomic layer deposition (ALD) is widely used for surface modification of materials to improve the catalytic performance for removing pollutants, e.g., CO, hydrocarbons, heavy metal ions, and organic pollutants, and much progress has been achieved. In this review, we summarize the recent development of ALD applications in environmental remediation from the perspective of surface modification approaches, including conformal coating, uniform particle deposition, and area-selective deposition. Through the ALD conformal coating, the activity of photocatalysts improved. Uniform particle deposition is used to prepare nanostructured catalysts via ALD for removal of air pollutions and dyes. Area-selective deposition is adopted to cover the specific defects on the surface of materials and synthesize bimetallic catalysts to remove CO and other contaminations. In addition, the design strategy of catalysts and shortcomings of current studies are discussed in each section. At last, this review points out some potential research trends and comes up with a few routes to further improve the performance of catalysts via ALD surface modification and deeper investigate the ALD reaction mechanisms.


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