Controlled line shaped electron beam for silicon zone melting recrystallization on float glass substrates

2005 ◽  
Vol 76 (6) ◽  
pp. 063901 ◽  
Author(s):  
F. Gromball ◽  
C. Groth ◽  
J. Müller
Keyword(s):  
Electron Beam ◽  
Float Glass ◽  
Zone Melting ◽  
Glass Substrates

scholarly journals Fabrication of Ultranarrow Nanochannels with Ultrasmall Nanocomponents in Glass Substrates

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 775
Author(s):  
Hiroki Kamai ◽  
Yan Xu
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Dry Etching ◽  
Dissimilar Material ◽  
Glass Substrates ◽  
Nanofluidic Devices ◽  
Fundamental Research ◽  
Fine Glass ◽  
Physical Phenomena

Nanofluidics is supposed to take advantage of a variety of new physical phenomena and unusual effects at nanoscales typically below 100 nm. However, the current chip-based nanofluidic applications are mostly based on the use of nanochannels with linewidths above 100 nm, due to the restricted ability of the efficient fabrication of nanochannels with narrow linewidths in glass substrates. In this study, we established the fabrication of nanofluidic structures in glass substrates with narrow linewidths of several tens of nanometers by optimizing a nanofabrication process composed of electron-beam lithography and plasma dry etching. Using the optimized process, we achieved the efficient fabrication of fine glass nanochannels with sub-40 nm linewidths, uniform lateral features, and smooth morphologies, in an accurate and precise way. Furthermore, the use of the process allowed the integration of similar or dissimilar material-based ultrasmall nanocomponents in the ultranarrow nanochannels, including arrays of pockets with volumes as less as 42 zeptoliters (zL, 10−21 L) and well-defined gold nanogaps as narrow as 19 nm. We believe that the established nanofabrication process will be very useful for expanding fundamental research and in further improving the applications of nanofluidic devices.

In Situ Thin Film Stress Measurements – A Path to Understanding the Structure and Morphology of Electron Beam Evaporated ZnS

2002 ◽  
Vol 749 ◽  
Author(s):  
Vincent Barrioz ◽  
Stuart J. C. Irvine ◽  
D. Paul
Keyword(s):  
Residual Stress ◽  
Surface Roughness ◽  
Electron Beam ◽  
Stress Reduction ◽  
Float Glass ◽  
Film Stress ◽  
Intrinsic Stress ◽  
Ex Situ ◽  
Stress Measurements

ABSTRACTZnS is a material of choice in the optical coating industry for its optical properties and broad transparency range. One of the drawbacks of ZnS is that it develops high compressive intrinsic stress resulting in large residual stress in the deposited layer. This paper concentrates on the evolution of residual stress reduction in ZnS single layers, depending upon their deposition rate or the substrate temperature during deposition (i.e. 22 °C and 133 °C). The substrate preparation is addressed for consideration of layer adhesion. Residual stress of up to − 550 MPa has been observed in amorphous/poor polycrystalline ZnS layers, deposited on CMX and Float glass type substrates, by electron beam evaporation at 22 °C, with a surface roughness between 0.4 and 0.8 nm. At 133 °C, the layer had a surface roughness of 1 nm, the residual stress in the layer decreased to − 150 MPa, developing a wurtzite structure with a (002) preferred orientation. In situ stress measurements, using a novel optical approach with a laser-fibre system, were carried out to identify the various sources of stress. A description of this novel in situ stress monitor and its advantages are outlined. The residual stress values were supported by two ex situ stress techniques. The surface morphology analysis of the ZnS layers was carried out using an atomic force microscope (AFM), and showed that stress reduced layers actually gave rougher surfaces.

Crystallization of Vacuum-Deposited Indium Antimonide Films by the Electron Beam Zone-Melting Process

1967 ◽  
Vol 6 (12) ◽  
pp. 1464-1465 ◽  
Author(s):  
Susumu Namba ◽  
Akira Kawazu ◽  
Norio Kanekama ◽  
Toshiaki Akimoto
Keyword(s):  
Electron Beam ◽  
Indium Antimonide ◽  
Melting Process ◽  
Zone Melting

Numerical and experimental study of electron beam floating zone melting of Iridium single crystal

2017 ◽  
Vol 250 ◽  
pp. 239-246 ◽  
Author(s):  
Jieren Yang ◽  
Hu Wang ◽  
Binqiang Wang ◽  
Rui Hu ◽  
Yi Liu ◽  
...  
Keyword(s):  
Experimental Study ◽  
Electron Beam ◽  
Single Crystal ◽  
Zone Melting ◽  
Floating Zone ◽  
Iridium Single Crystal
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