Effects of ion energy on the crystal size and hydrogen bonding in plasma-deposited nanocrystalline silicon thin films

2005 ◽  
Vol 97 (10) ◽  
pp. 104334 ◽  
Author(s):  
S. Lebib ◽  
P. Roca i Cabarrocas
Keyword(s):  
Thin Films ◽  
Hydrogen Bonding ◽  
Crystal Size ◽  
Nanocrystalline Silicon ◽  
Ion Energy ◽  
Silicon Thin Films

Optical Transitions in Light-Emitting Nanocrystalline Silicon Thin Films

1999 ◽  
Vol 557 ◽  
Author(s):  
T. Toyama ◽  
Y. Kotani ◽  
A. Shimode ◽  
S. Abo ◽  
H. Okamoto
Keyword(s):  
Thin Films ◽  
Crystal Size ◽  
Nanocrystalline Silicon ◽  
Optical Transitions ◽  
Direct Transition ◽  
Light Emitting ◽  
Silicon Thin Films ◽  
Peak Energy ◽  
The Mean ◽  
Nanocrystalline Si

AbstractOptical transitions in nanocrystalline Si (nc-Si) thin films with different mean crystal sizes ranging from < 2 nm to ~3 nm have been studied by electroreflectance (ER) spectroscopy. At 293 K, ER signals are observed at 1.20-1.37 eV to be corresponding to fundamental gap in bulk crystalline Si. With a decrease in the mean crystal sizes of nc-Si, the transition energy of the fundamental gap is increased and the ER signal is intensified. The bandgap widening would be due to quantum confinement (QC) in nc-Si, and the increased signal indicates appearance of direct transition nature. The ER signals are also observed at 2.2 eV and at E1 (E0’) direct gap of 3.1-3.4 eV, while photoluminescence (PL) peak energies are located at 1.65-1.75 eV and at 2.3 eV. With the reduced mean crystal size, the 1.7-eV PL peak energy is also increased, suggesting that QC is also responsible for the increased PL peak energy.

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

Nanocrystalline silicon thin films prepared by radiofrequency magnetron sputtering

2002 ◽  
Vol 403-404 ◽  
pp. 91-96 ◽  
Author(s):  
C. Gonçalves ◽  
S. Charvet ◽  
A. Zeinert ◽  
M. Clin ◽  
K. Zellama
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films

A Study of Non-Infrared-Active Hydrogen Bonding in a-Si:H Thin Film using combined Calibrated Temperature Desorption Spectroscopy and FTIR

2000 ◽  
Vol 609 ◽  
Author(s):  
DJ. Santjojo ◽  
J.C.L. Cornish ◽  
M.O.G. Talukder
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Hydrogen Bonding ◽  
Hydrogenated Amorphous Silicon ◽  
Active Hydrogen ◽  
Linear Temperature ◽  
Silicon Thin Films ◽  
Temperature Ramp ◽  
Hydrogenated Amorphous ◽  
Hydrogen Effusion

ABSTRACTNon-infrared-active hydrogen bonding species were investigated by analyzing the infrared spectra and the calibrated temperature desorption spectroscopy (CTDS) spectra of hydrogen released during degassing of hydrogenated amorphous silicon thin films. Samples were degassed gradually using a linear temperature ramp (0.5°C/s). Each stage corresponds to a temperature at which the hydrogen effusion peaks can be found (~ 340°C, ~ 500°C and ~ 610°C). Differences in the amounts of hydrogen obtained from the FTIR spectra and the CTDS measurement correspond to the non-infrared-active, occluded hydrogen.

scholarly journals INVESTIGATION OF GROWTH MECHANISM OF NANOCRYSTALLINE SILICON THIN FILMS PREPARED BY HOT-FILAMENT CHEMICAL VAPOR DEPOSITION

1997 ◽  
Vol 46 (10) ◽  
pp. 2015
Author(s):  
CHEN GUO ◽  
GUO XIAO-XU ◽  
ZHU MEI-FANG ◽  
SUN JING-LAN ◽  
XU HUAI-ZHE ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films ◽  
Hot Filament
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