Momentum matrix element and conduction band nonparabolicity in wurtzite GaN

2005 ◽  
Vol 86 (16) ◽  
pp. 161908 ◽  
Author(s):  
S. Shokhovets ◽  
G. Gobsch ◽  
O. Ambacher
Keyword(s):  
Matrix Element ◽  
Conduction Band ◽  
Momentum Matrix Element ◽  
Band Nonparabolicity

Strain-induced conduction-band nonparabolicity of GaAs-GaAs1−xPxsuperlattices

1988 ◽  
Vol 37 (8) ◽  
pp. 4306-4309 ◽  
Author(s):  
L. D. L. Brown ◽  
M. Jaros
Keyword(s):  
Conduction Band ◽  
Band Nonparabolicity

APW Approach to the Momentum Matrix Element Calculation

1983 ◽  
Vol 118 (2) ◽  
pp. K121-K124 ◽  
Author(s):  
I. I. Gegusin ◽  
V. N. Datsyuk
Keyword(s):  
Matrix Element ◽  
Element Calculation ◽  
Momentum Matrix Element

scholarly journals Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET

2016 ◽  
Vol 2016 ◽  
pp. 1-8
Author(s):  
Yasuhisa Omura
Keyword(s):  
Effective Mass ◽  
Conduction Band ◽  
Threshold Voltage ◽  
Mathematical Formulation ◽  
Electron System ◽  
Band Model ◽  
Dimensional Electron ◽  
Dimensional Electron System ◽  
Low Dimensional ◽  
Band Nonparabolicity

This paper reconsiders the mathematical formulation of the conventional nonparabolic band model and proposes a model of the effective mass of conduction band electrons including the nonparabolicity of the conduction band. It is demonstrated that this model produces realistic results for a sub-10-nm-thick Si layer surrounded by an SiO2layer. The major part of the discussion is focused on the low-dimensional electron system confined with insulator barriers. To examine the feasibility of our consideration, the model is applied to the threshold voltage of nanoscale SOI FinFETs and compared to prior experimental results. This paper also addresses a model of the effective mass of valence band holes assuming the nonparabolic condition.

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