Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias

2005 ◽  
Vol 86 (15) ◽  
pp. 152102 ◽  
Author(s):  
V. Höink ◽  
M. D. Sacher ◽  
J. Schmalhorst ◽  
G. Reiss ◽  
D. Engel ◽  
...  
Keyword(s):  
Exchange Bias ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Ion Bombardment

Influence of ion bombardment on transport properties and exchange bias in magnetic tunnel junctions

2003 ◽  
Vol 94 (9) ◽  
pp. 5556-5558 ◽  
Author(s):  
J. Schmalhorst ◽  
V. Höink ◽  
G. Reiss ◽  
D. Engel ◽  
D. Junk ◽  
...  
Keyword(s):  
Transport Properties ◽  
Exchange Bias ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Ion Bombardment

PERPENDICULAR EXCHANGE-BIAS INDUCED BY A DISCONTINUOUS Ru LAYER IN Co90Fe10/Ru/Co90Fe10/FeMn MULTILAYERS

2011 ◽  
Vol 25 (11) ◽  
pp. 1493-1499
Author(s):  
JIN BAO ◽  
XIAO-GUANG XU ◽  
XIAO-QI LI ◽  
DE-LIN ZHANG ◽  
YONG JIANG
Keyword(s):  
Magnetron Sputtering ◽  
Exchange Bias ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Valves ◽  
Dc Magnetron Sputtering

A series of Co 90 Fe 10/ Ru/Co 90 Fe 10/ FeMn multilayers were fabricated by DC magnetron sputtering. Our results show that the in-plane and perpendicular exchange-bias fields H ex of the multilayers can be controlled by the continuity of the Ru layer. Increasing the continuity of the Ru layer increases the in-plane H ex and decreases the perpendicular one. When the thickness of the Ru layer is 0.5 nm, the perpendicular H ex reaches as high as 682 Oe. The perpendicular exchange-bias induced by a discontinuous underlayer may be applied in future perpendicular anisotropic spin valves or magnetic tunnel junctions.

Large Exchange Bias IrMn/CoFe for Magnetic Tunnel Junctions

2008 ◽  
Vol 44 (11) ◽  
pp. 2824-2827 ◽  
Author(s):  
L.E. Fernandez-Outon ◽  
K. O'Grady ◽  
S. Oh ◽  
M. Zhou ◽  
M. Pakala
Keyword(s):  
Exchange Bias ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions

Current-induced switching of exchange bias in nano-scaled magnetic tunnel junctions with a synthetic antiferromagnetic pinned layer

2012 ◽  
Vol 111 (7) ◽  
pp. 07B103 ◽  
Author(s):  
C. T. Chao ◽  
C. Y. Kuo ◽  
Lance Horng ◽  
M. Tsunoda ◽  
M. Takahashi ◽  
...  
Keyword(s):  
Exchange Bias ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions

scholarly journals Effect of ion bombardment to Al-N barrier in Magnetic Tunnel Junctions on their TMR properties

2005 ◽  
Vol 29 (6) ◽  
pp. 653-657
Author(s):  
M. Tsunoda ◽  
Y. Watanabe ◽  
K. Imakita ◽  
S. Yoshimura ◽  
M. Takahashi
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Ion Bombardment

scholarly journals Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions

2015 ◽  
Vol 106 (19) ◽  
pp. 192401 ◽  
Author(s):  
N. Teichert ◽  
A. Boehnke ◽  
A. Behler ◽  
B. Weise ◽  
A. Waske ◽  
...  
Keyword(s):  
Thin Films ◽  
Exchange Bias ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Bias Effect ◽  
Exchange Bias Effect

Structural and magneto-transport properties of lattice-mismatched epitaxial Fe/SrO/MgO/Fe magnetic tunnel junctions

2020 ◽  
Vol 59 (10) ◽  
pp. 103001
Author(s):  
Aurelie Spiesser ◽  
Shintaro Kon ◽  
Yukiko Yasukawa ◽  
Shinji Yuasa ◽  
Hiroshi Imamura ◽  
...  
Keyword(s):  
Transport Properties ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions
Sign in / Sign up

Export Citation Format

Share Document