Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

2005 ◽  
Vol 97 (9) ◽  
pp. 091101 ◽  
Author(s):  
Hideki Hirayama
2004 ◽  
Vol 43 (No. 10A) ◽  
pp. L1241-L1243 ◽  
Author(s):  
Hideki Hirayama ◽  
Katsushi Akita ◽  
Takashi Kyono ◽  
Takao Nakamura ◽  
Koji Ishibashi

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 420 ◽  
Author(s):  
Yung-Min Pai ◽  
Chih-Hao Lin ◽  
Chun-Fu Lee ◽  
Chun-Peng Lin ◽  
Cheng-Huan Chen ◽  
...  

To realize high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency (LEE) is crucial. This paper proposes an aluminum-based sidewall reflector structure that could replace the conventional ceramic-based packaging method. We design optimization simulations and experimental results demonstrated the light power output could be enhanced 18.38% of DUV-LEDs packaged with the aluminum-based sidewall.


2004 ◽  
Vol 84 (23) ◽  
pp. 4762-4764 ◽  
Author(s):  
V. Adivarahan ◽  
S. Wu ◽  
J. P. Zhang ◽  
A. Chitnis ◽  
M. Shatalov ◽  
...  

2015 ◽  
Author(s):  
Zetian Mi ◽  
Songrui Zhao ◽  
Ashfiqua Connie ◽  
Mohammad Hadi Tavakoli Dastjerdi

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