Density functional theory study of adsorption and dissociation of HfCl4 and H2O on Ge∕Si(100)-(2×1): Initial stage of atomic layer deposition of HfO2 on SiGe surface

2005 ◽  
Vol 86 (14) ◽  
pp. 142901 ◽  
Author(s):  
Wei Chen ◽  
Hong-Liang Lu ◽  
David Wei Zhang ◽  
Min Xu ◽  
Jie Ren ◽  
...  
2005 ◽  
Vol 479 (1-2) ◽  
pp. 73-76 ◽  
Author(s):  
Wei Chen ◽  
David Wei Zhang ◽  
Jie Ren ◽  
Hong-Liang Lu ◽  
Jian-Yun Zhang ◽  
...  

2011 ◽  
Vol 675-677 ◽  
pp. 1249-1252
Author(s):  
Jie Ren ◽  
Guang Fen Zhou

The competitive reactions in atomic layer deposition (ALD) of HfO2, ZrO2 and Al2O3 on the hydroxylated Si(100) surfaces are investigated by using density functional theory. The surface reactions in ALD of HfO2 and ZrO2 show large similarities in energetics and geometrical structures. However, both of them show discrepancies with the surface reactions in ALD of Al2O3. In addition, by comparing with the self-termination reactions, we could find that the further growth reactions are both kinetically and thermodynamically more favorable in ALD of HfO2, ZrO2 and Al2O3.


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