Electrical properties of plasma display panel with Mg1−xZnxO protecting thin films deposited by a radio frequency magnetron sputtering method

2005 ◽  
Vol 86 (15) ◽  
pp. 153503 ◽  
Author(s):  
E. Y. Jung ◽  
S. G. Lee ◽  
S. H. Sohn ◽  
D. K. Lee ◽  
H. K. Kim
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Plasma Display Panel ◽  
Radio Frequency Magnetron Sputtering ◽  
Plasma Display

MANIPULATING THE STRUCTURAL AND ELECTRICAL PROPERTIES OF ZINC OXIDE THIN FILMS BY CHANGING THE SPUTTERING POWER OF RADIO FREQUENCY MAGNETRON SPUTTERING

2017 ◽  
Vol 24 (Supp01) ◽  
pp. 1850006 ◽  
Author(s):  
YANG WANG ◽  
CHENGBIAO WANG ◽  
ZHIJIAN PENG ◽  
QI WANG ◽  
XIULI FU
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Resistivity ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Interstitial Zinc ◽  
Sputtering Power

Oxygen-deficient zinc oxides thin films with different levels of defects were prepared by using radio frequency magnetron sputtering method with sintered zinc oxide disk as target at different sputtering powers. The composition, structure and electrical properties of the prepared films were investigated. Under the present conditions, all the obtained films possessed würtzite structure, which were growing preferentially along the [Formula: see text]-axis. The thickness of the films, the size of the zinc oxide grains and the content of Zn atoms increased with increasing sputtering power. In the films deposited at a sputtering power from 52[Formula: see text]W to 212[Formula: see text]W, the main defect was interstitial zinc. With increasing sputtering power, due to the enhanced number of interstitial zinc in the films, their room-temperature electrical resistivity would decrease, which was controlled by electron conduction. At increasing measurement temperature, their electrical resistivity would increase, owing to the decrease of defect concentration caused by oxidization.

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