Electrical conduction transition and largely reduced leakage current in aluminum-doped barium strontium titanate thin films heteroepitaxially grown on Ir∕MgO∕Si(100)

2005 ◽  
Vol 86 (13) ◽  
pp. 132902 ◽  
Author(s):  
T. L. Chen ◽  
X. M. Li ◽  
W. B. Wu ◽  
W. D. Yu ◽  
X. D. Gao ◽  
...  
2001 ◽  
Vol 16 (9) ◽  
pp. 2680-2686 ◽  
Author(s):  
J. S. Fang ◽  
C. T. Chang ◽  
T. S. Chin

Barium-strontium titanate (BST) thin films were prepared by a two-step deposition using radio-frequency magnetron sputtering on Pt/Ti/SiO2-buffered Si(100) substrate. The initial BST layer thickness and intermediate annealing strongly affect the resultant electric properties of the two-step BST thin films. The optimal two-step BST films, with a first-layer thickness of 30 nm intermediate annealed at 610 °C under 1 torr oxygen. The dielectric breakdown and leakage current density of the two-step film are above 625 kV/cm and 9.5 nA/cm2 at 100 kV/cm, respectively, compared with 400 kV/cm and 17 nA/cm2 for the one-step films. We conclude that the two-step deposition dramatically improves dielectric breakdown and enhances leakage current density while keeping the dielectric constant uninfluenced.


2015 ◽  
Vol 57 (8) ◽  
pp. 1529-1534 ◽  
Author(s):  
V. B. Shirokov ◽  
Yu. I. Golovko ◽  
V. M. Mukhortov ◽  
Yu. I. Yuzyuk ◽  
P. E. Janolin ◽  
...  

2010 ◽  
Vol 256 (22) ◽  
pp. 6531-6535 ◽  
Author(s):  
Yanhua Fan ◽  
Shuhui Yu ◽  
Rong Sun ◽  
Lei Li ◽  
Yansheng Yin ◽  
...  

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