Critical height and growth mode in epitaxial copper nanowire arrays fabricated using glancing angle deposition

2005 ◽  
Vol 86 (12) ◽  
pp. 123114 ◽  
Author(s):  
H. Alouach ◽  
G. J. Mankey
Keyword(s):  
Glancing Angle Deposition ◽  
Nanowire Arrays ◽  
Growth Mode ◽  
Critical Height ◽  
Copper Nanowire ◽  
Glancing Angle ◽  
Angle Deposition

Epitaxial growth of copper nanowire arrays grown on H-terminated Si(110) using glancing-angle deposition

2004 ◽  
Vol 19 (12) ◽  
pp. 3620-3625 ◽  
Author(s):  
H. Alouach ◽  
G.J. Mankey
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Glancing Angle Deposition ◽  
Nanowire Arrays ◽  
Angle Of Incidence ◽  
X Ray ◽  
Copper Nanowire ◽  
Glancing Angle ◽  
Angle Deposition ◽  
Deposition Angle

We report the growth of epitaxial nanowire arrays using the technique of glancing- angle deposition with substrate rotation. Epitaxial copper nanowire arrays were deposited on H-terminated Si(110) using electron beam evaporation. The nanowire arrays were characterized by x-ray diffraction, atomic force microscopy, and scanning electron microscopy. Individual nanowires were confirmed to be single crystalline by examination with transmission electron microscopy. The epitaxial growth involves twin formation with the epitaxial orientation relationships: Cu(111)//Si(110) with Cu[110]//Si[001] and Cu[110//Si[001] for each of the twins. As the angle of incidence is increased, Cu grows as isolated columns with a spacing that increases as the angle of incidence is increased. However, the thickness limit for epitaxial growth is reduced as the angle of incidence is increased, and it is reduced to approximately 300 nm for a deposition angle of 75°. The x-ray rocking curves for samples deposited at increasing polar angles show steadily improving crystal orientation up to a deposition angle of about 35°. Beyond 65° deposition angle, the rocking curves show significantly sharper split diffraction peaks indicating that there are distinct orientations. In addition, the split peaks have a much lower full width at half maximum. The observed behavior is explained based on arguments involving unidirectional diffusion arising from adatom parallel momentum.

Electrical properties of vertically oriented TiO2 nanowire arrays synthesized by glancing angle deposition technique

2013 ◽  
Vol 9 (2) ◽  
pp. 213-217 ◽  
Author(s):  
Aniruddha Mondal ◽  
Jay Chandra Dhar ◽  
P. Chinnamuthu ◽  
Naorem Khelchand Singh ◽  
Kalyan Kumar Chattopadhyay ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Glancing Angle Deposition ◽  
Nanowire Arrays ◽  
Deposition Technique ◽  
Tio2 Nanowire ◽  
Glancing Angle ◽  
Angle Deposition

Fabrication of Crystalline Semiconductor Nanowires by Vapor-Liquid-Solid Glancing Angle Deposition (VLS-GLAD) Technique

2011 ◽  
Vol 1350 ◽  
Author(s):  
Arif S. Alagoz ◽  
Tansel Karabacak
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Semiconductor Nanowires ◽  
Glancing Angle Deposition ◽  
Nanowire Arrays ◽  
Vapor Liquid Solid ◽  
Crystalline Semiconductor ◽  
Glancing Angle ◽  
Angle Deposition ◽  
Vapor Liquid

ABSTRACTVapor-liquid-solid (VLS) method has become one of the few and most powerful bottom-up single crystal nanowire growth techniques in nanotechnology due to its easy scalability from micro to nano feature sizes, high throughput, relatively low cost, and its applicability to various semiconductor materials. On the other hand, control of growth direction and crystal orientation of nanowires, which determine their electrical, optical, and mechanical properties, stand as major issues in VLS technique. In this study, we demonstrate a new vapor-liquid-solid glancing angle deposition (VLS-GLAD) fabrication approach to produce crystalline semiconductor nanowires with controlled geometry. VLS-GLAD is a physical vapor deposition nanowire fabrication approach based on selective deposition of nanowire source atoms onto metal catalyst nanoislands placed on a crystal wafer. In this technique, collimated obliquely incident flux of source atoms selectively deposit on catalyst islands by using “shadowing effect”. Geometrical showing effect combined with conventional VLS growth mechanism leads to the growth of tilted crystalline semiconductor nanowire arrays. In this study, we report morphological and structural properties of tilted single crystal germanium nanowire arrays fabricated by utilizing a conventional thermal evaporation system. In addition to the tilted geometry, by introducing substrate rotation, nanowires with various morphologies including helical, zig-zag, or vertical shapes can be fabricated. Engineering crystalline nanowire morphology by using VLS-GLAD have the potential of enabling control of optical, electrical, and mechanical properties of these nanostructures leading to the development of novel 3D nano-devices.

Photo‐Induced Self‐Cleaning and Wettability in TiO 2 Nanocolumn Arrays Obtained by Glancing‐Angle Deposition with Sputtering

2021 ◽  
pp. 2100071
Author(s):  
Fernando Fresno ◽  
María U. González ◽  
Lidia Martínez ◽  
Marcial Fernández‐Castro ◽  
Mariam Barawi ◽  
...  
Keyword(s):  
Glancing Angle Deposition ◽  
Glancing Angle ◽  
Self Cleaning ◽  
Angle Deposition

Effects of annealing on arrays of Ge nanocolumns formed by glancing angle deposition

2012 ◽  
Vol 258 (24) ◽  
pp. 9762-9769 ◽  
Author(s):  
C. Khare ◽  
J.W. Gerlach ◽  
T. Höche ◽  
B. Fuhrmann ◽  
H.S. Leipner ◽  
...  
Keyword(s):  
Glancing Angle Deposition ◽  
Glancing Angle ◽  
Angle Deposition
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