Effect of growth temperature and post-growth thermal annealing on carrier localization and deep level emissions in GaNAs∕GaAs quantum well structures

2005 ◽  
Vol 86 (12) ◽  
pp. 121910 ◽  
Author(s):  
Q. X. Zhao ◽  
S. M. Wang ◽  
Y. Q. Wei ◽  
M. Sadeghi ◽  
A. Larsson ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Growth Temperature ◽  
Deep Level ◽  
Carrier Localization ◽  
Quantum Well Structures

scholarly journals Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well

1999 ◽  
Vol 4 (S1) ◽  
pp. 642-647
Author(s):  
Michael C.Y. Chan ◽  
Kwok-On Tsang ◽  
E. Herbert Li ◽  
Steven P. Denbaars
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Quantum Well ◽  
Thermal Annealing ◽  
Diffusion Coefficients ◽  
Green Light ◽  
Optical Gain ◽  
Quantum Well Structures ◽  
Strained Layer ◽  
Constant Diffusion

Quantum well (QW) material engineering has attracted a considerable amount of interest from many people because of its ability to produce a number of optoelectronic devices. QW composition intermixing is a thermal induced interdiffusion of the constituent atoms through the hetero-interface. The intermixing process is an attractive way to achieve the modification of the QW band structure. It is known that the band structure is a fundamental determinant for such electronic and optical properties of materials as the optical gain, the refractive index and the absorption. During the process, the as-grown square-QW compositional profile is modified to a graded profile, thereby altering the confinement profile and the subband structure in the QW. The blue-shifting of the wavelength in the intermixed QW structure is found in this process.In recent years, III-nitride semiconductors have attracted much attention. This is mainly due to their large bandgap range from 1.89eV (wurtzite InN) to 3.44eV (wurtzite GaN). InGaN/GaN quantum well structures have been used to achieve high lumens blue and green light emitting diodes. Such structures also facilitate the production of full colour LED displays by complementing the colour spectrum of available LEDs.In this paper, the effects of thermal annealing on the strained-layer InGaN/GaN QW will be presented. The effects of intermixing on the confinement potential of InGaN/GaN QWs have been theoretically analysed, with sublattices interdiffusion as the basis. This process is described by Fick’s law, with constant diffusion coefficients in both the well and the barrier layers. The diffusion coefficients depend on the annealing temperature, time and the activation energy of constituent atoms. The optical properties of intermixed InGaN/GaN QW structure of different interdiffusion rates have been theoretically analyzed for applications of novel optical devices. The photoluminescence studies and the intermixed QW modeling have been used to understand the effects of intermixing.

MBE Growth of III-V Nitride Films and Quantum-Well Structures Using Multiple RF Plasma Sources

1996 ◽  
Vol 449 ◽  
Author(s):  
M. A. L. Johnson ◽  
Zhonghai Yu ◽  
C. Boney ◽  
W. H. Rowland ◽  
W. C. Hughes ◽  
...  
Keyword(s):  
Quantum Well ◽  
Deep Level ◽  
Buffer Layers ◽  
Rf Plasma ◽  
Multiple Sources ◽  
Single Quantum Well ◽  
Active Nitrogen ◽  
Mbe Growth ◽  
Plasma Sources ◽  
Quantum Well Structures

ABSTRACTMBE growth of III-V nitrides is being studied at NCSU using MOVPE grown GaN buffer layers on SiC as substrates. Rf plasma sources are being used for the generation of active nitrogen during MBE deposition. Through the use of multiple rf plasma sources, sufficient active nitrogen is generated in order to examine the properties of III-V nitride layers grown at higher substrate temperatures and growth rates. The resulting MBE-grown GaN films exhibit remarkably intense photoluminescence (PL) dominated by a sharp band-edge peak at 3.409 eV having a FWHM of 36 meV at 300K. No deep level emission is observed. AlGaN and InGaN films and quantum well structures have also been prepared using multiple sources. A modulated beam MBE approach is used in conjunction with the multiple rf plasma sources to grow InGaN. RHEED and TEM studies reveal flat 2D InGaN quantum well structures. Depending on the indium content, GaN/InGaN single-quantum-well structures exhibit electroluminescence at 300K peaked in the blue-violet to the green spectral region.

Effect of thermal annealing on the luminescence properties of ZnCdSe/ZnSe quantum-well structures

1997 ◽  
Vol 31 (2) ◽  
pp. 186-188 ◽  
Author(s):  
E. M. Dianov ◽  
P. A. Trubenko ◽  
E. É. Filimonov ◽  
E. A. Shcherbakov
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Luminescence Properties ◽  
Quantum Well Structures
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