Changes of magnetic domain structure induced by temperature-variation and electron-beam irradiation in Pr0.5Sr0.5CoO3

2005 ◽  
Vol 86 (13) ◽  
pp. 131913 ◽  
Author(s):  
M. Uchida ◽  
R. Mahendiran ◽  
Y. Tomioka ◽  
Y. Matsui ◽  
K. Ishizuka ◽  
...  
Keyword(s):  
Electron Beam ◽  
Temperature Variation ◽  
Domain Structure ◽  
Electron Beam Irradiation ◽  
Magnetic Domain ◽  
Magnetic Domain Structure ◽  
Beam Irradiation

Domain structure evolution in relaxor PLZT 8/65/35 ceramics after chemical etching and electron beam irradiation

2018 ◽  
Vol 525 (1) ◽  
pp. 83-92 ◽  
Author(s):  
L. V. Gimadeeva ◽  
V. A. Shikhova ◽  
D. S. Chezganov ◽  
A. S. Merzliakova ◽  
E. O. Vlasov ◽  
...  
Keyword(s):  
Electron Beam ◽  
Domain Structure ◽  
Chemical Etching ◽  
Electron Beam Irradiation ◽  
Structure Evolution ◽  
Beam Irradiation

Domain structure formation by electron beam irradiation in lithium niobate crystals at elevated temperatures

2019 ◽  
Vol 115 (9) ◽  
pp. 092903
Author(s):  
D. S. Chezganov ◽  
E. O. Vlasov ◽  
E. A. Pashnina ◽  
M. A. Chuvakova ◽  
A. A. Esin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Lithium Niobate ◽  
Structure Formation ◽  
Domain Structure ◽  
Electron Beam Irradiation ◽  
Elevated Temperatures ◽  
Beam Irradiation ◽  
Lithium Niobate Crystals

Domains and domain nucleation in magnetron-sputtered CoCr thin films

1993 ◽  
Vol 51 ◽  
pp. 1046-1047
Author(s):  
B. G. Demczyk
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Magnetic Domain ◽  
Domain Size ◽  
Film Plane ◽  
Magnetic Domain Structure ◽  
Perpendicular Magnetization ◽  
Columnar Grains ◽  
Reversal Mechanism ◽  
Lorentz Transmission Electron Microscopy

CoCr thin films have been of interest for a number of years due to their strong perpendicular anisotropy, favoring magnetization normal to the film plane. The microstructure and magnetic properties of CoCr films prepared by both rf and magnetron sputtering have been examined in detail. By comparison, however, relatively few systematic studies of the magnetic domain structure and its relation to the observed film microstructure have been reported. In addition, questions still remain as to the operative magnetization reversal mechanism in different film thickness regimes. In this work, the magnetic domain structure in magnetron sputtered Co-22 at.%Cr thin films of known microstructure were examined by Lorentz transmission electron microscopy. Additionally, domain nucleation studies were undertaken via in-situ heating experiments.It was found that the 50 nm thick films, which are comprised of columnar grains, display a “dot” type domain configuration (Figure 1d), characteristic of a perpendicular magnetization. The domain size was found to be on the order of a few structural columns in diameter.

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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