Charge transport in metal oxides: A theoretical study of hematite α-Fe2O3

2005 ◽  
Vol 122 (14) ◽  
pp. 144305 ◽  
Author(s):  
N. Iordanova ◽  
M. Dupuis ◽  
K. M. Rosso
2017 ◽  
Vol 53 (5) ◽  
pp. 967-970 ◽  
Author(s):  
Xiuyun Wang ◽  
Zhixin Lan ◽  
Yi Liu ◽  
Yongjin Luo ◽  
Jianjun Chen ◽  
...  

The 1D nanowire or hollow tubular structure of various transition metal oxides can be tuned by controlling heating rates.


2019 ◽  
Vol 7 (22) ◽  
pp. 6721-6727
Author(s):  
Hang Yin ◽  
Daoyuan Zheng ◽  
Yan Qiao ◽  
Xiaofang Chen

A multi-dimensional relationship founded on the targeted [N] number, the energy gap (Eg) and the aromatic degree was constructed for predicting cyclobutadienoid-containing dinaphthobenzo[1,2:4,5]dicyclobutadienes (DNBDCs) with better charge transport properties.


2015 ◽  
Vol 3 (9) ◽  
pp. 1913-1921 ◽  
Author(s):  
Zeyi Tu ◽  
Xuri Huang ◽  
Yuanping Yi

Good ambipolar charge-transport characteristics have been revealed for the halogenated anthanthrone crystals by DFT and MD calculations.


2019 ◽  
Vol 43 (8) ◽  
pp. 3583-3600 ◽  
Author(s):  
Jian-Xun Fan ◽  
Li-Fei Ji ◽  
Ning-Xi Zhang ◽  
Pan-Pan Lin ◽  
Gui-Ya Qin ◽  
...  

Combining quantum-tunneling-effect-enabled hopping theory with kinetic Monte Carlo simulation and dynamic disorder effects, the charge transport properties of a series of N-hetero 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) derivatives with halogen substitutions were studied.


MRS Advances ◽  
2016 ◽  
Vol 1 (38) ◽  
pp. 2659-2664
Author(s):  
Varsha Rani ◽  
Akanksha Sharma ◽  
Subhasis Ghosh

ABSTRACTCharge transport properties of pentacene have been investigated by a joint experimental and theoretical study. The growth of pentacene on the substrates shows mainly two different polymorphic phases, a bulk phase and a thin-film phase. The thin-film phase is crucial for the charge transport in two-terminal and three-terminal devices such as organic Schottky diodes and organic thin film transistors, respectively. Experimentally, mobility in two-terminal devices is less by five orders of magnitude than that in three-terminal devices. We show here that this difference can be explained on the basis of strong electronic coupling between molecular dimers located in the ab-plane and relatively weak coupling between the planes (along the c-axis).


2017 ◽  
Vol 2 (22) ◽  
pp. 6296-6303 ◽  
Author(s):  
Yue Jiang ◽  
Clément Cabanetos ◽  
Siriporn Jungsuttiwong ◽  
Domenico Alberga ◽  
Carlo Adamo ◽  
...  

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