Origin of the optical phonon frequency shifts in ZnO quantum dots

2005 ◽  
Vol 86 (5) ◽  
pp. 053103 ◽  
Author(s):  
Khan A. Alim ◽  
Vladimir A. Fonoberov ◽  
Alexander A. Balandin
Keyword(s):  
Quantum Dots ◽  
Optical Phonon ◽  
Phonon Frequency ◽  
Frequency Shifts ◽  
Optical Phonon Frequency ◽  
Zno Quantum Dots

Interpretation of the Phonon Frequency Shifts in ZnO Quantum Dots

2005 ◽  
Vol 872 ◽  
Author(s):  
Khan A. Alim ◽  
Vladimir A. Fonoberov ◽  
Alexander A. Balandin
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Phonon Frequency ◽  
Low Voltage ◽  
Red Shift ◽  
Phonon Confinement ◽  
Free Standing ◽  
Frequency Shifts ◽  
Zno Quantum Dots ◽  
Phonon Localization

AbstractNanostructures made of zinc oxide (ZnO), a wide-bandgap semiconductor, have recently attracted attention due to their proposed applications in low-voltage and short-wavelength (368 nm) electro-optical devices, transparent ultraviolet (UV) protection films, gas sensors, and varistors. Raman spectroscopy presents a powerful tool for identifying specific materials in complex structures and for extracting useful information on properties of nanoscale objects. At the same time the origin of Raman peak deviation from the bulk values is not always well understood for new material systems. There are three main mechanisms that can induce phonon shifts in the free-standing undoped ZnO nanostructures: (i) phonon confinement by the quantum dot boundaries; (ii) phonon localization on defects and (iii) the laser-induced heating in nanostructure ensembles. Here, we report results of the combined non-resonant and resonant Raman scattering studies of an ensemble of ZnO quantum dots with diameter 20 nm. Based on our experimental data, we have been able to identify the origin of the observed phonon frequency shifts. It has been found that the ultraviolet laser heating of the ensemble induces a large red shift of the phonon frequencies. It is calculated that the observed red shift of 14 cm-1 corresponds to the local temperature of the quantum dot ensemble of about 700°C.

Strain-Induced Shift of Optical Phonon Frequency in InGaP Layers Grown on GaAs Substrates

1987 ◽  
Vol 26 (Part 2, No. 10) ◽  
pp. L1597-L1600 ◽  
Author(s):  
Takamasa Kato ◽  
Takashi Matsumoto ◽  
Mitsuru Hosoki ◽  
Tetsuro Ishida
Keyword(s):  
Optical Phonon ◽  
Phonon Frequency ◽  
Gaas Substrates ◽  
Optical Phonon Frequency

Raman scattering on silicon nanowires: The thermal conductivity of the environment determines the optical phonon frequency

2006 ◽  
Vol 88 (23) ◽  
pp. 233114 ◽  
Author(s):  
H. Scheel ◽  
S. Reich ◽  
A. C. Ferrari ◽  
M. Cantoro ◽  
A. Colli ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Raman Scattering ◽  
Silicon Nanowires ◽  
Optical Phonon ◽  
Phonon Frequency ◽  
Optical Phonon Frequency

Band gap engineering and spatial confinement of optical phonon in ZnO quantum dots

2006 ◽  
Vol 88 (26) ◽  
pp. 263117 ◽  
Author(s):  
Kuo-Feng Lin ◽  
Hsin-Ming Cheng ◽  
Hsu-Cheng Hsu ◽  
Wen-Feng Hsieh
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Optical Phonon ◽  
Spatial Confinement ◽  
Band Gap Engineering ◽  
Zno Quantum Dots
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