Low resistance spin-dependent magnetic tunnel junction with high breakdown voltage for current-induced-magnetization-switching devices

Hao Meng; Jianguo Wang; Zhitao Diao; Jian-Ping Wang

doi:10.1063/1.1857651

Low resistance spin-dependent magnetic tunnel junction with high breakdown voltage for current-induced-magnetization-switching devices

Journal of Applied Physics ◽

10.1063/1.1857651 ◽

2005 ◽

Vol 97 (10) ◽

pp. 10C926 ◽

Cited By ~ 26

Author(s):

Hao Meng ◽

Jianguo Wang ◽

Zhitao Diao ◽

Jian-Ping Wang

Keyword(s):

Breakdown Voltage ◽

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Magnetization Switching ◽

Low Resistance ◽

High Breakdown Voltage ◽

Switching Devices

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Low RA Magnetic Tunnel Junction Arrays in Conjunction with Low Switching Current and High Breakdown Voltage for STT-MRAM at 10 nm and Beyond

2018 IEEE Symposium on VLSI Technology ◽

10.1109/vlsit.2018.8510653 ◽

2018 ◽

Cited By ~ 7

Author(s):

C. Park ◽

H. Lee ◽

C. Ching ◽

J. Ahn ◽

R. Wang ◽

...

Keyword(s):

Breakdown Voltage ◽

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Switching Current ◽

High Breakdown Voltage ◽

Junction Arrays

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Magnetization switching by spin-polarized current in low-resistance magnetic tunnel junction with MgO [001] barrier

IEEE Transactions on Magnetics ◽

10.1109/tmag.2005.854816 ◽

2005 ◽

Vol 41 (10) ◽

pp. 2633-2635 ◽

Cited By ~ 32

Author(s):

H. Kubota ◽

A. Fukushima ◽

Y. Ootani ◽

S. Yuasa ◽

K. Ando ◽

...

Keyword(s):

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Magnetization Switching ◽

Low Resistance ◽

Spin Polarized

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High breakdown voltage and high driving current in a novel silicon-on-insulator MESFET with high- and low-resistance boxes in the drift region

The European Physical Journal Plus ◽

10.1140/epjp/i2018-12047-5 ◽

2018 ◽

Vol 133 (6) ◽

Cited By ~ 1

Author(s):

Ali Naderi ◽

Hamed Mohammadi

Keyword(s):

Breakdown Voltage ◽

Silicon On Insulator ◽

Drift Region ◽

Low Resistance ◽

High Breakdown Voltage ◽

Driving Current

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Effect of Interface Roughness on Magnetoresistance and Magnetization Switching in Double-Barrier Magnetic Tunnel Junction

IEEE Transactions on Magnetics ◽

10.1109/tmag.2009.2018586 ◽

2009 ◽

Vol 45 (6) ◽

pp. 2396-2398 ◽

Cited By ~ 2

Author(s):

J.Y. Hwang ◽

S.Y. Lee ◽

N.I. Lee ◽

H.I. Yim ◽

M.Y. Kim ◽

...

Keyword(s):

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Interface Roughness ◽

Double Barrier ◽

Magnetization Switching

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Transmission Electron Microscopy Study of Thermally Annealed Low Resistance Magnetic Tunnel Junction

phys stat sol (a) ◽

10.1002/1521-396x(200205)191:1<296::aid-pssa296>3.0.co;2-3 ◽

2002 ◽

Vol 191 (1) ◽

pp. 296-304

Author(s):

H. Kyung ◽

J.H. Lee ◽

C.S. Yoon ◽

C.K. Kim

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Microscopy Study ◽

Electron Microscopy Study ◽

Transmission Electron Microscopy Study ◽

Low Resistance ◽

Transmission Electron

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Dependence of switching current distribution on current pulse width of current-induced magnetization switching in MgO-based magnetic tunnel junction

Journal of Applied Physics ◽

10.1063/1.2832435 ◽

2008 ◽

Vol 103 (7) ◽

pp. 07A707 ◽

Cited By ~ 8

Author(s):

Misako Morota ◽

Akio Fukushima ◽

Hitoshi Kubota ◽

Kay Yakushiji ◽

Shinji Yuasa ◽

...

Keyword(s):

Current Pulse ◽

Current Distribution ◽

Tunnel Junction ◽

Pulse Width ◽

Magnetic Tunnel Junction ◽

Magnetization Switching ◽

Switching Current

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Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect

Applied Physics Letters ◽

10.1063/1.4880720 ◽

2014 ◽

Vol 104 (21) ◽

pp. 212406 ◽

Cited By ~ 62

Author(s):

S. Kanai ◽

Y. Nakatani ◽

M. Yamanouchi ◽

S. Ikeda ◽

H. Sato ◽

...

Keyword(s):

Electric Field ◽

Tunnel Junction ◽

Field Effect ◽

Magnetic Tunnel Junction ◽

Spin Transfer Torque ◽

Spin Transfer ◽

Electric Field Effect ◽

Magnetization Switching

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Spin orbital torque driven magnetization switching in magnetic tunnel junction with inter-layer exchange coupling

Journal of Applied Physics ◽

10.1063/1.4905791 ◽

2015 ◽

Vol 117 (2) ◽

pp. 023901 ◽

Cited By ~ 1

Author(s):

Lei Xu ◽

Zhongshui Ma ◽

Dan Wei

Keyword(s):

Tunnel Junction ◽

Exchange Coupling ◽

Magnetic Tunnel Junction ◽

Magnetization Switching ◽

Spin Orbital

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Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier

INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005. ◽

10.1109/intmag.2005.1464287 ◽

2005 ◽

Author(s):

Jin-Oh Song ◽

Seong-Rae Lee ◽

Hyun-Joon Shin

Keyword(s):

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Electrical Stability ◽

Low Resistance ◽

Oxide Barrier ◽

Al Oxide

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Voltage-induced magnetization switching method utilizing dipole coupled magnetic tunnel junction

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2020.167105 ◽

2020 ◽

Vol 513 ◽

pp. 167105

Author(s):

Jiahao Liu ◽

Lu Huang ◽

Xiaokuo Yang ◽

Cheng Li ◽

Nuo Xu ◽

...

Keyword(s):

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Magnetization Switching ◽

Switching Method

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