Extremely low-voltage driving of organic light-emitting diodes with a Cs-doped phenyldipyrenylphosphine oxide layer as an electron-injection layer

2005 ◽  
Vol 86 (3) ◽  
pp. 033503 ◽  
Author(s):  
Takahito Oyamada ◽  
Hiroyuki Sasabe ◽  
Chihaya Adachi ◽  
Seiichiro Murase ◽  
Tsuyoshi Tominaga ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Light Emitting Diodes ◽  
Low Voltage ◽  
Electron Injection ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Electron Injection Layer ◽  
Organic Light

Atomic layer deposited zirconium oxide electron injection layer for efficient organic light emitting diodes

2013 ◽  
Vol 14 (1) ◽  
pp. 312-319 ◽  
Author(s):  
Maria Vasilopoulou ◽  
Stella Kennou ◽  
Spyridon Ladas ◽  
Stavroula N. Georga ◽  
Martha Botzakaki ◽  
...  
Keyword(s):  
Zirconium Oxide ◽  
Light Emitting Diodes ◽  
Atomic Layer ◽  
Electron Injection ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Electron Injection Layer ◽  
Organic Light

Novel Solution-Processed ZnO-Based Electron Injection Layer for Organic Light-Emitting Diodes

2017 ◽  
Vol 214 (12) ◽  
pp. 1700583 ◽  
Author(s):  
Dan Dong ◽  
Yang Wang ◽  
Lu Lian ◽  
Dongxu Feng ◽  
Han Wang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Electron Injection ◽  
Organic Light Emitting Diodes ◽  
Solution Processed ◽  
Light Emitting ◽  
Electron Injection Layer ◽  
Organic Light

Single-Carrier Devices for the Understanding of the Voltage Drift in Organic Light Emitting Diodes

2011 ◽  
Vol 1359 ◽  
Author(s):  
J. Boizot ◽  
V. Gohri ◽  
H. Doyeux
Keyword(s):  
Light Emitting Diodes ◽  
Low Voltage ◽  
Electron Injection ◽  
Organic Light Emitting Diodes ◽  
Hole Injection ◽  
Constant Current ◽  
Light Emitting ◽  
Single Carrier ◽  
Organic Light ◽  
Voltage Drift

ABSTRACTThe aim of this study is to analyze and mitigate the voltage drift phenomenon observed in top-emitting organic light emitting diodes (OLED) when driven at constant current. An operating device may experience voltage increase over time due to factors such as interface or bulk material degradation, charge accumulation and formation of trap states. Single-carrier devices were fabricated to understand the contribution to voltage drift from each of these causes. Doping in electron injection layer (4, 7-diphenyl-1,10-phenanthroline or Bphen) and hole injection layer (2,2’,7,7’-tetra(N,N-di-tolyl)amino-spiro-bifluorene or Spiro-TTB) were optimized to obtain ohmic injection contacts. Devices with tris(8-hydroxy-quinoline) aluminium (Alq3) degrade significantly with holes injection and undergo high voltage increase in lifetime test measurements. On the contrary, devices with N,N’-di(naphtalen-1-y1)-N,N’-diphenyl-benzidine (NPB) exhibit an ambipolar charge transport behavior and low voltage drift under both hole and electron injection.

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