Synthesis of well-aligned ZnO nanowires by simple physical vapor deposition on c-oriented ZnO thin films without catalysts or additives

2005 ◽  
Vol 86 (2) ◽  
pp. 024108 ◽  
Author(s):  
Lisheng Wang ◽  
Xiaozhong Zhang ◽  
Songqing Zhao ◽  
Guoyuan Zhou ◽  
Yueliang Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Zno Nanowires ◽  
Zno Thin Films

Synthesis of Well-aligned ZnO Nanowires Using Simple Physical Vapor Deposition without Catalysts or Additives

2005 ◽  
Vol 879 ◽  
Author(s):  
Lisheng Wang ◽  
Xiaozhong Zhang ◽  
Songqing Zhao ◽  
Guoyuan Zhou ◽  
Yueliang Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Growth Direction ◽  
Hexagonal Structure ◽  
Zno Nanowires ◽  
Nanowire Arrays ◽  
Zno Thin Films ◽  
Ultraviolet Emission ◽  
Strong Ultraviolet Emission

AbstractWell-aligned ZnO nanowires were synthesized by simple physical vapor deposition using c-oriented ZnO thin films as substrate without catalysts or additives. The synthesized ZnO nanowires have two typical average diameters: 60 nm in majority and 120 nm in minority. They are about 4ím in length and well aligned along the normal direction of the substrate. Most of the synthesized ZnO nanowires are single crystalline in a hexagonal structure and grow along the [001] direction. The c-oriented ZnO thin films control the growth direction. Photoluminescence spectrum was measured showing a single strong ultraviolet emission (380 nm). Such result indicates that the ZnO nanowire arrays can be applied to excellent optoelectronic devices.

scholarly journals Synthesis and Characterizations of ZnO Thin Films Grown by Physical Vapor Deposition Technique

2020 ◽  
Vol 1 (4) ◽  
pp. 135-139
Author(s):  
Raghad Mohammed ◽  
Sabah Ahmed ◽  
Ahmed Abdulrahman ◽  
Samir Hamad
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
High Purity ◽  
Seed Layer ◽  
Physical Vapor Deposition ◽  
Glass Slide ◽  
Zno Thin Films ◽  
Chemical Compositions ◽  
Zno Thin Film

In the current study, Zinc oxide (ZnO) thin films have been synthesized over the whole the glass-slide substrate by utilizing the physical vapor deposition (PVD) technique. The Zinc (Zn) seed layer was deposited by heating the high purity Zn powder by using a molybdenum (Mo) boat at 37.503×10-3 Torr vacuum pressure of the PVD chamber. The ZnO thin films were fabricated by oxidation of the Zn seed layer coated glass-slide substrate at 400 °C. The morphological, chemical compositions, crystal quality, structural and optical properties of fabricated ZnO thin film were characterized and studied utilizing several characterization techniques. The results found that the high distribution density, homogenous, uniform, and high-quality ZnO thin film was grown over the entire substrate. The synthesized ZnO thin film with a thickness of 130 nm was grown with high purity and polycrystalline hexagonal-Wurtzite phase of ZnO. The sharp, and dominant diffraction peak was observed at peak position 34.3375 along (002) plane and c-axis. The investigated crystal size, dislocation density, and interplanar spacing were about 13.33 nm, 5.63×10-5 A°, and 2.609 A°, respectively. Also, UV-visible spectroscopy results show the high transmittance and low absorbance in the visible (Vis.) region and were about 90%, and the transmittance decreases sharply near the UV region at a wavelength around 383 nm. Besides, obtained the energy band-gap (Eg) was about 3.24 eV.

Localized Physical Vapor Deposition via Focused Laser Spike Dewetting of Gold Thin Films for Nanoscale Patterning

2018 ◽  
Vol 2 (1) ◽  
pp. 586-597 ◽  
Author(s):  
Tianxing Ma ◽  
Michael P. Nitzsche ◽  
Arielle R. Gamboa ◽  
Valeria Saro-Cortes ◽  
Jonathan P. Singer
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Nanoscale Patterning ◽  
Gold Thin Films

Synthesis of CeB6 thin films by physical vapor deposition and their field emission investigations

2012 ◽  
Vol 177 (1) ◽  
pp. 117-120 ◽  
Author(s):  
J.Q. Xu ◽  
T. Mori ◽  
Y. Bando ◽  
D. Golberg ◽  
D. Berthebaud ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Vapor Deposition ◽  
Physical Vapor Deposition

Optoelectronic properties of Sb2S3 thin films grown by Physical Vapor Deposition

2021 ◽  
Author(s):  
J. Cruz-Gomez ◽  
E. Hernandez-Cantero ◽  
D. Santos-Cruz ◽  
S.A. Mayen-Hernandez ◽  
F. DeMoure-Flores ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Optoelectronic Properties

Thermodynamic Analysis of Physical Vapor Deposition (PVD) Inorganic Thin Films on Low Temperature Cofired Ceramic (LTCC)

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000175-000182
Author(s):  
Carol Putman ◽  
Rachel Cramm Horn ◽  
Ambrose Wolf ◽  
Daniel Krueger
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
High Reliability ◽  
Interface Energy ◽  
Molecular Stability ◽  
Thin Film Adhesion ◽  
Inorganic Thin Films

Abstract Low temperature cofired ceramic (LTCC) has been established as an excellent packaging technology for high reliability, high density microelectronics. The functionality and robustness of rework has been increased through the incorporation of a Physical Vapor Deposition (PVD) thin film Ti/Cu/Pt/Au metallization. PVD metallization is suitable for RF (Radio Frequency) applications as well as digital systems. Adhesion of the Ti “adhesion layer” to the LTCC as-fired surface is not well understood. While past work has established extrinsic parameters for delamination mechanisms of thin films on LTCC substrates, there is incomplete information regarding the intrinsic (i.e. thermodynamic) parameters in literature. This paper analyzes the thermodynamic favorability of adhesion between Ti, Cr, and their oxides coatings on LTCC (assumed as amorphous silica glass and Al2O3). Computational molecular calculations are used to determine interface energy as an indication of molecular stability over a range of temperatures. The end result will expand the understanding of thin film adhesion to LTCC surfaces and assist in increasing the long-term reliability of the interface bonding on RF microelectronic layers.

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