Switching field distribution in magnetic tunnel junctions with a synthetic antiferromagnetic free layer

2005 ◽  
Vol 97 (10) ◽  
pp. 10C905 ◽  
Author(s):  
W. C. Jeong ◽  
J. H. Park ◽  
G. H. Koh ◽  
G. T. Jeong ◽  
H. S. Jeong ◽  
...  
Keyword(s):  
Field Distribution ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Free Layer ◽  
Switching Field ◽  
Switching Field Distribution

Switching-Field Stabilization against Effects of High-Temperature Annealing in Magnetic Tunnel Junctions using Thermally Reliable NixFe100-x/Al-Oxide/Ta Free Layer

2006 ◽  
Vol 45 (5A) ◽  
pp. 3829-3834 ◽  
Author(s):  
Yoshiyuki Fukumoto ◽  
Hideaki Numata ◽  
Katsumi Suemitsu ◽  
Kiyokazu Nagahara ◽  
Norikazu Ohshima ◽  
...  
Keyword(s):  
High Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
High Temperature Annealing ◽  
Free Layer ◽  
Switching Field ◽  
Al Oxide

scholarly journals Double-Free-Layer Magnetic Tunnel Junctions for Probabilistic Bits

2021 ◽  
Vol 15 (4) ◽  
Author(s):  
Kerem Y. Camsari ◽  
Mustafa Mert Torunbalci ◽  
William A. Borders ◽  
Hideo Ohno ◽  
Shunsuke Fukami
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Free Layer

Characterization of magnetic tunnel junctions (MTJ) with magnetostrictive free layer materials

2004 ◽  
Vol 272-276 ◽  
pp. 2023-2024 ◽  
Author(s):  
M. Löhndorf ◽  
S. Dokupil ◽  
J. Wecker ◽  
M. Rührig ◽  
E. Quandt
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Free Layer

Damping constant in a free layer in nanoscale CoFeB/MgO magnetic tunnel junctions investigated by homodyne-detected ferromagnetic resonance

2016 ◽  
Vol 10 (1) ◽  
pp. 013001 ◽  
Author(s):  
Motoya Shinozaki ◽  
Eriko Hirayama ◽  
Shun Kanai ◽  
Hideo Sato ◽  
Fumihiro Matsukura ◽  
...  
Keyword(s):  
Ferromagnetic Resonance ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Free Layer

scholarly journals Nanoscale true random bit generator based on magnetic state transitions in magnetic tunnel junctions

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Alex S. Jenkins ◽  
Lara San Emeterio Alvarez ◽  
Paulo P. Freitas ◽  
Ricardo Ferreira
Keyword(s):  
Tunnel Junctions ◽  
Magnetic State ◽  
Magnetic Tunnel Junctions ◽  
Vortex State ◽  
Magnetic Vortex ◽  
State Transitions ◽  
Free Layer ◽  
Plane Field ◽  
Random Bit Generator ◽  
Ac Current

Abstract We present an investigation into the in-plane field induced free layer state transitions found in magnetic tunnel junctions. By applying an ac current into an integrated field antenna, the magnetisation of the free layer can be switched between the magnetic vortex state and the quasi-uniform anti-parallel state. When in the magnetic vortex state, the vortex core gyrates a discrete number of times, and at certain frequencies there is a 50% chance of the core gyrating n or n − 1 times, leading to the proposal of a novel nanoscale continuous digital true random bit generator.

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