Interface structures and periodic film distortions induced by substrate-surface steps in Gd-doped ceria thin-film growth

2005 ◽  
Vol 97 (4) ◽  
pp. 043506 ◽  
Author(s):  
D. X. Huang ◽  
C. L. Chen ◽  
A. J. Jacobson
Vacuum ◽  
2000 ◽  
Vol 56 (3) ◽  
pp. 185-190 ◽  
Author(s):  
Helin Wei ◽  
Zuli Liu ◽  
Kailun Yao

1997 ◽  
Vol 04 (02) ◽  
pp. 219-222 ◽  
Author(s):  
T. LEWOWSKI ◽  
P. WIECZOREK

The possibility of modification of the thin film growth on an insulating (sapphire) substrate by using a Ga monolayer as a "surfactant" was studied. We found that the films grown in this way are electrically conducting and can emit photoelectrons at much lower thickness than those deposited on a pure substrate. The surfactant stabilizes the positions of Ag atoms on the substrate surface and inhibits the coalescence of small nuclei into bigger islands, even when the film is annealed to 450 K. This fact may be very important for thin metal film technology.


2002 ◽  
Vol 17 (2) ◽  
pp. 302-305 ◽  
Author(s):  
D. X. Huang ◽  
Y. Nakamura ◽  
Y. Yamada ◽  
I. Hirabayshi

By combining the cross-sectional observation of the randomly oriented film areas and the analyses of the film microstructural influence by the substrate-surface morphology, we achieved a novel understanding of the YBa2Cu3O7–x (YBCO) thin film growth process, which leads to an explanation of different microstructures formed in YBCO thin films. Selective and competitive growth of YBa2Cu3O7–x and Ba–Cu–O/Cu–O was found to occur in the whole film growth process depending on the local surface roughness in which the interfacial energy played a controlling role.


1994 ◽  
Vol 355 ◽  
Author(s):  
M. S. Altman ◽  
Q. Cai ◽  
W. F. Chung ◽  
E. Z. Luo ◽  
H. Pinkvos ◽  
...  

2002 ◽  
Vol 190 (1-4) ◽  
pp. 139-143 ◽  
Author(s):  
J.T. Ryu ◽  
T. Fujino ◽  
M. Katayama ◽  
Y.B. Kim ◽  
K. Oura

2021 ◽  
Vol 118 (10) ◽  
pp. 102402
Author(s):  
Hiroaki Shishido ◽  
Akira Okumura ◽  
Tatsuya Saimyoji ◽  
Shota Nakamura ◽  
Shigeo Ohara ◽  
...  

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