Spin-polarized tunneling in room-temperature mesoscopic spin valves

2004 ◽  
Vol 85 (24) ◽  
pp. 5914-5916 ◽  
Author(s):  
S. O. Valenzuela ◽  
M. Tinkham
Keyword(s):  
Room Temperature ◽  
Spin Valves ◽  
Spin Polarized ◽  
Spin Polarized Tunneling

Fabrication and Properties of La-Manganite/SnO2 Composites

2010 ◽  
Vol 123-125 ◽  
pp. 81-84 ◽  
Author(s):  
Geun Woo Kim ◽  
Yong Jun Seo ◽  
Jin Long Bian ◽  
Chan Gyu Lee ◽  
Bon Heun Koo
Keyword(s):  
Room Temperature ◽  
X Ray Diffraction ◽  
Scanning Electronic Microscopy ◽  
Electronic Microscopy ◽  
X Ray ◽  
Structure And Morphology ◽  
Low Field ◽  
Spin Polarized ◽  
Mr Effect ◽  
Spin Polarized Tunneling

Composites with compositions La0.7Ca0.3MnO3(LCMO) and La0.7Sr0.3MnO3(LSMO)/SnO2 were prepared by a standard ceramic technique. The structure and morphology of the composites have been studied by the X-ray diffraction (XRD) and scanning electronic microscopy (SEM). The XRD and SEM results indicate that no reaction occurs between La based maganite and SnO2 grains, and that SnO2 segregates mostly at the grain boundaries of La based maganite. The variation in resistivity with temperature has been studied and shows a semiconducting behavior, furthermore the composites exhibit metallic percolation. It is interesting to note that an enhanced magnetoresisitance (MR) effect for the composites is found over a wide temperature range from low temperature to room temperature in an applied magnetic field of 0.5 Tesla. The spin-polarized tunneling and the spin-polarized tunneling may be attributed to the enhanced low-field magnetoresistance (LFMR) effect.

scholarly journals Huge magnetoresistance in topological insulator spin-valves at room temperature

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Peng Tseng ◽  
Jyun-Wei Chen ◽  
Wen-Jeng Hsueh
Keyword(s):  
Thin Film ◽  
Topological Insulators ◽  
Room Temperature ◽  
Spin Valve ◽  
Spin Valves ◽  
Spintronic Devices ◽  
Spin Polarized ◽  
Controlled Potential ◽  
Gate Potential ◽  
Mr Effect

AbstractTopological insulators (TI) have extremely high potential in spintronic applications. Here, a topological insulators thin-film (TITF) spin valve with the use of the segment gate-controlled potential exhibits a huge magnetoresistance (MR) value higher than 1000% at room temperature which is more than 50 times the MR of typical topological insulators (TI) spin-valves. A high spin-polarized current is provided by the band structure generated by the tunable segment potential. The results reveal a very large resistance difference between the parallel and antiparallel configurations. The MR effect is strongly influenced by the thin-film thickness, the gate potential, the gate size, and the distribution. The proposed results will help to not only improve the room-temperature performance of the spin-valves but also enhance the applications of magnetic memories and spintronic devices.

Spin-polarized tunneling through a ferromagnetic insulator

2009 ◽  
Vol 105 (7) ◽  
pp. 07C919
Author(s):  
M. Kok ◽  
J. N. Beukers ◽  
A. Brinkman
Keyword(s):  
Spin Polarized ◽  
Spin Polarized Tunneling

Room temperature spin polarized injection in organic semiconductor

2002 ◽  
Vol 122 (3-4) ◽  
pp. 181-184 ◽  
Author(s):  
V. Dediu ◽  
M. Murgia ◽  
F.C. Matacotta ◽  
C. Taliani ◽  
S. Barbanera
Keyword(s):  
Organic Semiconductor ◽  
Room Temperature ◽  
Spin Polarized
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