Current collapse-free i-GaN∕AlGaN∕GaN high-electron-mobility transistors with and without surface passivation

S. Arulkumaran; T. Hibino; T. Egawa; H. Ishikawa

doi:10.1063/1.1830677

Current collapse-free i-GaN∕AlGaN∕GaN high-electron-mobility transistors with and without surface passivation

Applied Physics Letters ◽

10.1063/1.1830677 ◽

2004 ◽

Vol 85 (23) ◽

pp. 5745-5747 ◽

Cited By ~ 16

Author(s):

S. Arulkumaran ◽

T. Hibino ◽

T. Egawa ◽

H. Ishikawa

Keyword(s):

Electron Mobility ◽

Surface Passivation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors

Journal of The Electrochemical Society ◽

10.1149/1.1512675 ◽

2002 ◽

Vol 149 (11) ◽

pp. G613 ◽

Cited By ~ 33

Author(s):

B. Luo ◽

R. Mehandru ◽

J. Kim ◽

F. Ren ◽

B. P. Gila ◽

...

Keyword(s):

Electron Mobility ◽

Surface Passivation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Comparison of surface passivation on films for reduction of current collapse in AlGaN/GaN high electron mobility transistors

Proceedings. IEEE Lester Eastman Conference on High Performance Devices ◽

10.1109/lechpd.2002.1146790 ◽

2003 ◽

Author(s):

B. Luo ◽

R. Mehandru ◽

J. Kim ◽

F. Ren ◽

B.P. Gila ◽

...

Keyword(s):

Electron Mobility ◽

Surface Passivation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation

Solid-State Electronics ◽

10.1016/j.sse.2013.09.001 ◽

2013 ◽

Vol 89 ◽

pp. 207-211 ◽

Cited By ~ 8

Author(s):

A. Alexewicz ◽

M. Alomari ◽

D. Maier ◽

H. Behmenburg ◽

C. Giesen ◽

...

Keyword(s):

Surface Treatment ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Thermally Stable ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.1953873 ◽

2005 ◽

Vol 86 (25) ◽

pp. 253511 ◽

Cited By ~ 21

Author(s):

P. Kordoš ◽

J. Bernát ◽

M. Marso ◽

H. Lüth ◽

F. Rampazzo ◽

...

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Effects of Surface Passivation and Deposition Methods on the 1/ $f$ Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

IEEE Electron Device Letters ◽

10.1109/led.2015.2400472 ◽

2015 ◽

Vol 36 (4) ◽

pp. 315-317 ◽

Cited By ~ 9

Author(s):

Thanh Ngoc Thi Do ◽

Anna Malmros ◽

Piero Gamarra ◽

Cedric Lacam ◽

Marie-Antoinette Di Forte-Poisson ◽

...

Keyword(s):

Electron Mobility ◽

Surface Passivation ◽

High Electron Mobility Transistors ◽

High Electron ◽

Noise Performance ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.061001 ◽

2011 ◽

Vol 50 (6) ◽

pp. 061001 ◽

Cited By ~ 7

Author(s):

Masafumi Tajima ◽

Tamotsu Hashizume

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Bias Stress ◽

Electron Mobility Transistors ◽

Current Collapse

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Current collapse suppression by SiO2 passivation in p-GaN/AlGaN/GaN enhancement-mode high electron mobility transistors

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) ◽

10.1109/iciprm.2016.7528613 ◽

2016 ◽

Author(s):

Shin-Yi Ho ◽

Chih-Hao Wang ◽

JianJang Huang

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors ◽

Current Collapse

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Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors

Solid-State Electronics ◽

10.1016/j.sse.2010.05.002 ◽

2010 ◽

Vol 54 (11) ◽

pp. 1430-1433 ◽

Cited By ~ 7

Author(s):

S. Arulkumaran ◽

G.I. Ng ◽

C.H. Lee ◽

Z.H. Liu ◽

K. Radhakrishnan ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Rf Plasma ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Improvement of Current Collapse in Deeply Recessed Gate AlGaN/GaN High Electron Mobility Transistors without Field Modulating Structure

10.7567/ssdm.2011.a-1-4 ◽

2011 ◽

Author(s):

A. Imai ◽

K. Yamanaka ◽

Y. Suzuki ◽

T. Nanjo ◽

M. Suita ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse ◽

Recessed Gate

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Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

Electronics Letters ◽

10.1049/el:20010434 ◽

2001 ◽

Vol 37 (10) ◽

pp. 661 ◽

Cited By ~ 71

Author(s):

P.B. Klein ◽

S.C. Binari ◽

K. Ikossi-Anastasiou ◽

A.E. Wickenden ◽

D.D. Koleske ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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