Time-resolved and time-integrated photoluminescence analysis of state filling and quantum confinement of silicon quantum dots

2005 ◽  
Vol 97 (1) ◽  
pp. 013501 ◽  
Author(s):  
Lap Van Dao ◽  
Xiaoming Wen ◽  
My Tra Thi Do ◽  
Peter Hannaford ◽  
Eun-Chel Cho ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Confinement ◽  
Silicon Quantum Dots ◽  
Time Resolved ◽  
State Filling

State filling and time-resolved photoluminescence of excited states inInxGa1−xAs/GaAs self-assembled quantum dots

1996 ◽  
Vol 54 (16) ◽  
pp. 11548-11554 ◽  
Author(s):  
S. Raymond ◽  
S. Fafard ◽  
P. J. Poole ◽  
A. Wojs ◽  
P. Hawrylak ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Time Resolved ◽  
Self Assembled ◽  
Time Resolved Photoluminescence ◽  
State Filling

Quantum Confinement in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride

2001 ◽  
Vol 86 (7) ◽  
pp. 1355-1357 ◽  
Author(s):  
Nae-Man Park ◽  
Chel-Jong Choi ◽  
Tae-Yeon Seong ◽  
Seong-Ju Park
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Quantum Confinement ◽  
Silicon Quantum Dots

Free standing luminescent silicon quantum dots: evidence of quantum confinement and defect related transitions

2010 ◽  
Vol 21 (50) ◽  
pp. 505602 ◽  
Author(s):  
Mallar Ray ◽  
Syed Minhaz Hossain ◽  
Robert F Klie ◽  
Koushik Banerjee ◽  
Siddhartha Ghosh
Keyword(s):  
Quantum Dots ◽  
Quantum Confinement ◽  
Free Standing ◽  
Silicon Quantum Dots

scholarly journals The Interplay of Quantum Confinement and Hydrogenation in Amorphous Silicon Quantum Dots

2015 ◽  
Vol 27 (48) ◽  
pp. 8011-8016 ◽  
Author(s):  
Sadegh Askari ◽  
Vladmir Svrcek ◽  
Paul Maguire ◽  
Davide Mariotti
Keyword(s):  
Quantum Dots ◽  
Amorphous Silicon ◽  
Quantum Confinement ◽  
Silicon Quantum Dots

scholarly journals Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells

2007 ◽  
Vol 2007 ◽  
pp. 1-11 ◽  
Author(s):  
Eun-Chel Cho ◽  
Martin A. Green ◽  
Gavin Conibeer ◽  
Dengyuan Song ◽  
Young-Hyun Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Quantum Confinement ◽  
Collection Efficiency ◽  
Film Material ◽  
Defect States ◽  
Silicon Quantum Dots ◽  
Rich Material ◽  
Silicon Based ◽  
Si Quantum Dots

We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The work reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-film silicon-based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum dots, dispersed in a matrix of silicon carbide, nitride, or oxide, were fabricated by precipitation of Si-rich material deposited by reactive sputtering or PECVD. Bandgap opening of Si QDs in nitride is more blue-shifted than that of Si QD in oxide, while clear evidence of quantum confinement in Si quantum dots in carbide was hard to obtain, probably due to many surface and defect states. The PL decay shows that the lifetimes vary from 10 to 70 microseconds for diameter of 3.4 nm dot with increasing detection wavelength.

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