Real-time detection of ambient oxidation of steps and terraces on Si(111)-(1×1):H by scanning force microscopy

2004 ◽  
Vol 85 (18) ◽  
pp. 4157-4159 ◽  
Author(s):  
Abbas Khan ◽  
Peter Hess
2004 ◽  
Vol 25 (19) ◽  
pp. 1703-1707 ◽  
Author(s):  
Marat O. Gallyamov ◽  
Bernd Tartsch ◽  
Alexei R. Khokhlov ◽  
Sergei S. Sheiko ◽  
Hans G. Börner ◽  
...  

2004 ◽  
Vol 10 (18) ◽  
pp. 4599-4605 ◽  
Author(s):  
Marat O. Gallyamov ◽  
Bernd Tartsch ◽  
Alexei R. Khokhlov ◽  
Sergei S. Sheiko ◽  
Hans G. Börner ◽  
...  

2004 ◽  
Vol 10 (18) ◽  
pp. 4375-4375
Author(s):  
Marat O. Gallyamov ◽  
Bernd Tartsch ◽  
Alexei R. Khokhlov ◽  
Sergei S. Sheiko ◽  
Hans G. Börner ◽  
...  

Author(s):  
Chang Shen ◽  
Phil Fraundorf ◽  
Robert W. Harrick

Monolithic integration of optoelectronic integrated circuits (OEIC) requires high quantity etched laser facets which prevent the developing of more-highly-integrated OEIC's. The causes of facet roughness are not well understood, and improvement of facet quality is hampered by the difficulty in measuring the surface roughness. There are several approaches to examining facet roughness qualitatively, such as scanning force microscopy (SFM), scanning tunneling microscopy (STM) and scanning electron microscopy (SEM). The challenge here is to allow more straightforward monitoring of deep vertical etched facets, without the need to cleave out test samples. In this presentation, we show air based STM and SFM images of vertical dry-etched laser facets, and discuss the image acquisition and roughness measurement processes. Our technique does not require precision cleaving. We use a traditional tip instead of the T shape tip used elsewhere to preventing “shower curtain” profiling of the sidewall. We tilt the sample about 30 to 50 degrees to avoid the curtain effect.


Author(s):  
P. Fraundorf ◽  
B. Armbruster

Optical interferometry, confocal light microscopy, stereopair scanning electron microscopy, scanning tunneling microscopy, and scanning force microscopy, can produce topographic images of surfaces on size scales reaching from centimeters to Angstroms. Second moment (height variance) statistics of surface topography can be very helpful in quantifying “visually suggested” differences from one surface to the next. The two most common methods for displaying this information are the Fourier power spectrum and its direct space transform, the autocorrelation function or interferogram. Unfortunately, for a surface exhibiting lateral structure over several orders of magnitude in size, both the power spectrum and the autocorrelation function will find most of the information they contain pressed into the plot’s origin. This suggests that we plot power in units of LOG(frequency)≡-LOG(period), but rather than add this logarithmic constraint as another element of abstraction to the analysis of power spectra, we further recommend a shift in paradigm.


2003 ◽  
Vol 779 ◽  
Author(s):  
David Christopher ◽  
Steven Kenny ◽  
Roger Smith ◽  
Asta Richter ◽  
Bodo Wolf ◽  
...  

AbstractThe pile up patterns arising in nanoindentation are shown to be indicative of the sample crystal symmetry. To explain and interpret these patterns, complementary molecular dynamics simulations and experiments have been performed to determine the atomistic mechanisms of the nanoindentation process in single crystal Fe{110}. The simulations show that dislocation loops start from the tip and end on the crystal surface propagating outwards along the four in-plane <111> directions. These loops carry material away from the indenter and form bumps on the surface along these directions separated from the piled-up material around the indenter hole. Atoms also move in the two out-of-plane <111> directions causing propagation of subsurface defects and pile-up around the hole. This finding is confirmed by scanning force microscopy mapping of the imprint, the piling-up pattern proving a suitable indicator of the surface crystallography. Experimental force-depth curves over the depth range of a few nanometers do not appear smooth and show distinct pop-ins. On the sub-nanometer scale these pop-ins are also visible in the simulation curves and occur as a result of the initiation of the dislocation loops from the tip.


Sign in / Sign up

Export Citation Format

Share Document