Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

Nan Wu; Qingchun Zhang; Chunxiang Zhu; D. S. H. Chan; M. F. Li; N. Balasubramanian; Albert Chin; Dim-Lee Kwong

doi:10.1063/1.1812835

Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

Applied Physics Letters ◽

10.1063/1.1812835 ◽

2004 ◽

Vol 85 (18) ◽

pp. 4127-4129 ◽

Cited By ~ 99

Author(s):

Nan Wu ◽

Qingchun Zhang ◽

Chunxiang Zhu ◽

D. S. H. Chan ◽

M. F. Li ◽

...

Keyword(s):

Metal Oxide ◽

Surface Passivation ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

High K Gate Dielectric

Download Full-text

Mismatch of dielectric constants at the interface of nanometer metal-oxide-semiconductor devices with high-K gate dielectric impacts on the inversion charge density

Pramana ◽

10.1007/s12043-011-0052-0 ◽

2011 ◽

Vol 76 (4) ◽

pp. 657-666 ◽

Cited By ~ 4

Author(s):

LING-FENG MAO

Keyword(s):

Metal Oxide ◽

Charge Density ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Dielectric Constants ◽

Oxide Semiconductor ◽

High K ◽

Inversion Charge ◽

High K Gate Dielectric

Download Full-text

High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric

Applied Physics Letters ◽

10.1063/1.4979101 ◽

2017 ◽

Vol 110 (12) ◽

pp. 123506 ◽

Cited By ~ 5

Author(s):

L. N. Liu ◽

H. W. Choi ◽

J. P. Xu ◽

P. T. Lai

Keyword(s):

Metal Oxide ◽

High Performance ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Metal Oxide Semiconductor Capacitor ◽

High K Gate Dielectric

Download Full-text

Suppressed growth of unstable low-k GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor

Applied Physics Letters ◽

10.1063/1.2723074 ◽

2007 ◽

Vol 90 (16) ◽

pp. 163502 ◽

Cited By ~ 18

Author(s):

X. Zou ◽

J. P. Xu ◽

C. X. Li ◽

P. T. Lai

Keyword(s):

Water Vapor ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Low K ◽

Metal Oxide Semiconductor Capacitor ◽

High K Gate Dielectric

Download Full-text

Characteristics of Thermally Oxidized-Ti as a High-k Gate Dielectric on SiC Metal-Oxide-Semiconductor Devices

ECS Meeting Abstracts ◽

10.1149/ma2005-02/13/494 ◽

2005 ◽

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

High K Gate Dielectric

Download Full-text

HfTiAlO dielectric as an alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.2396891 ◽

2007 ◽

Vol 90 (8) ◽

pp. 082911 ◽

Cited By ~ 18

Author(s):

N. Lu ◽

H.-J. Li ◽

J. J. Peterson ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Next Generation ◽

High K ◽

High K Gate Dielectric

Download Full-text

Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness

Applied Physics Letters ◽

10.1063/1.4805037 ◽

2013 ◽

Vol 102 (19) ◽

pp. 192904 ◽

Cited By ~ 13

Author(s):

S. P. Pavunny ◽

P. Misra ◽

R. Thomas ◽

A. Kumar ◽

J. Schubert ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

High K ◽

High K Gate Dielectric

Download Full-text

Characteristics of Thermally Oxidized-Ti as a High-k Gate Dielectric on SiC Metal-Oxide-Semiconductor Devices

ECS Transactions ◽

10.1149/1.2209253 ◽

2019 ◽

Vol 1 (5) ◽

pp. 33-40

Author(s):

Rajat Mahapatra ◽

Nipapan Poolamai ◽

Nick Wright ◽

Amit K. Chakraborty ◽

Karl S. Coleman ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

High K Gate Dielectric

Download Full-text

Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric

Applied Physics Letters ◽

10.1063/1.4791676 ◽

2013 ◽

Vol 102 (7) ◽

pp. 073507 ◽

Cited By ~ 4

Author(s):

Jyun-Yu Tsai ◽

Ting-Chang Chang ◽

Wen-Hung Lo ◽

Ching-En Chen ◽

Szu-Han Ho ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hole Injection ◽

Hot Carrier ◽

High K ◽

Hot Carrier Degradation

Download Full-text

Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient

Applied Physics Letters ◽

10.1063/1.3462301 ◽

2010 ◽

Vol 97 (2) ◽

pp. 022903 ◽

Cited By ~ 28

Author(s):

H. X. Xu ◽

J. P. Xu ◽

C. X. Li ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K

Download Full-text

Impacts of Ti on electrical properties of Ge metal–oxide–semiconductor capacitors with ultrathin high-k LaTiON gate dielectric

Applied Physics A ◽

10.1007/s00339-010-5665-5 ◽

2010 ◽

Vol 99 (4) ◽

pp. 903-906 ◽

Cited By ~ 12

Author(s):

H. X. Xu ◽

J. P. Xu ◽

C. X. Li ◽

C. L. Chan ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K

Download Full-text