Electrical transport properties of microcrystalline silicon grown by plasma enhanced chemical vapor deposition

2004 ◽  
Vol 96 (12) ◽  
pp. 7306-7311 ◽  
Author(s):  
Nicola Pinto ◽  
Marco Ficcadenti ◽  
Lorenzo Morresi ◽  
Roberto Murri ◽  
Giuseppina Ambrosone ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Transport Properties ◽  
Vapor Deposition ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Electrical Transport Properties

Significant enhancement of the electrical transport properties of graphene films by controlling the surface roughness of Cu foils before and during chemical vapor deposition

Nanoscale ◽  
2014 ◽  
Vol 6 (21) ◽  
pp. 12943-12951 ◽  
Author(s):  
Dongmok Lee ◽  
Gi Duk Kwon ◽  
Jung Ho Kim ◽  
Eric Moyen ◽  
Young Hee Lee ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Transport Properties ◽  
Sheet Resistance ◽  
Vapor Deposition ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Significant Enhancement ◽  
Electrical Transport Properties ◽  
Graphene Films

Graphene resistivity decreases as the surface roughness of the copper foils decreases. Small grain polycrystalline graphene films grown on pre-annealed and electropolished copper exhibit a sheet resistance of 210 Ω □−1.

Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition

2002 ◽  
Vol 80 (19) ◽  
pp. 3548-3550 ◽  
Author(s):  
Jae-Ryoung Kim ◽  
Hye Mi So ◽  
Jong Wan Park ◽  
Ju-Jin Kim ◽  
Jinhee Kim ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Transport Properties ◽  
Vapor Deposition ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Electrical Transport Properties

Fabrication of First-Level Carbon Nanotube Interconnect Via Structures by Thermal Chemical Vapor Deposition

2005 ◽  
Author(s):  
Yunyu Wang ◽  
Zhen Yao ◽  
Shi Li ◽  
Paul S. Ho
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Copper Interconnects ◽  
Electrical Transport Properties ◽  
Thermal Chemical Vapor Deposition ◽  
Large Current ◽  
Scale Down ◽  
Cnt Arrays

As devices continue to scale down to the 50 nm technology node, current Cu/low k interconnect technology will face a number of challenges including reduced current carrying capabilities, decreased thermal conductivity, and reliability problems due to electromigration at large current densities. Carbon nanotubes (CNTs) with their unique structural, thermal and electrical transport properties have been suggested as a promising candidate as interconnect structures for future microelectronics. In this study we have demonstrated the growth of vertically aligned, highly dense CNT arrays by thermal chemical vapor deposition (CVD). It was found that a thin layer of tantalum (Ta), which was originally used as the barrier layer in copper interconnects, may enhance a uniform growth and better vertical alignments of CNT arrays. We have also developed a nanofabrication process of the first-level CNT via structures.

Lattice Structure at ZnSe-GaAs Heterojunction Interfaces Prepared by Organometallic Chemical Vapor Deposition

1982 ◽  
Vol 18 ◽  
Author(s):  
F. A. Ponce ◽  
W. Stutius ◽  
J. G. Werthen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electrical Transport ◽  
Defect Structure ◽  
Gaas Substrate ◽  
Lattice Structure ◽  
Chemical Vapor ◽  
Electrical Transport Properties ◽  
Substrate Surfaces ◽  
Organometallic Chemical Vapor Deposition

The lattice structure of ZnSe grown on GaAs by a low temperature low pressure organometallic chemical vapor deposition (CVD) process was studied using high resolution transmission electron microscopy. The defect structure of ZnSe epitaxial layers and of their interface with the GaAs substrate was directly imaged in cross section for GaAs substrate surfaces in the <100> and <111> orientations. It is shown that the ZnSe layers grow indeed epitaxially. The ZnSe layers grown on GaAs(100) contain a large density of faulted loops which are extrinsic in nature, whereas the prevailing defects in ZnSe layers grown on GaAs(111)B substrates are microtwins and stacking faults parallel to the filmsubstrate interface. A possible connection between the observed defect structure and the reported photoluminescence and electrical transport properties of ZnSe layers grown by organometallic CVD is also discussed.

ELECTRICAL TRANSPORT PROPERTIES OF DIPHASIC AMORPHOUS-MICROCRYSTALLINE SILICON CARBON ALLOYS

1994 ◽  
Vol 08 (15) ◽  
pp. 2059-2074 ◽  
Author(s):  
F. DEMICHELIS ◽  
C.F. PIRRI ◽  
E. TRESSO
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Carrier Transport ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Microcrystalline Silicon ◽  
Electrical Measurements ◽  
Electrical Transport Properties ◽  
Silicon Carbon ◽  
Band Structure Model

The dark conductivity of undoped diphasic amorphous-microcrystalline silicon carbon alloy films deposited by plasma-enhanced chemical vapor deposition has been studied as a function of temperature in the range 50–450 K, taking into account their composition, optical and structural properties. From electrical measurements the transport properties were examined and interpreted in terms of a band structure model which includes three mechanisms of carrier transport in different ranges of temperature. The comparison with experiments indicates that the results are consistent with the mechanisms and the model proposed.

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