Dopant profiling in vertical ultrathin channels of double-gate metal–oxide–semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy

Meishoku Masahara; Shinichi Hosokawa; Takashi Matsukawa; Kazuhiko Endo; Yuuichi Naitou; Hisao Tanoue; Eiichi Suzuki

doi:10.1063/1.1812571

Dopant profiling in vertical ultrathin channels of double-gate metal–oxide–semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy

Applied Physics Letters ◽

10.1063/1.1812571 ◽

2004 ◽

Vol 85 (18) ◽

pp. 4139-4141 ◽

Cited By ~ 15

Author(s):

Meishoku Masahara ◽

Shinichi Hosokawa ◽

Takashi Matsukawa ◽

Kazuhiko Endo ◽

Yuuichi Naitou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Nonlinear Dielectric ◽

Dopant Profiling

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Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.2400 ◽

2005 ◽

Vol 44 (4B) ◽

pp. 2400-2404 ◽

Cited By ~ 2

Author(s):

Meishoku Masahara ◽

Shinichi Hosokawa ◽

Takashi Matsukawa ◽

Kazuhiko Endo ◽

Yuichi Naitou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Nonlinear Dielectric ◽

Dopant Profiling ◽

Effect Transistor

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Analytical solution of fundamental surface potential equations for symmetric double-gate metal-oxide-semiconductor field-effect transistors

International Journal of Electronics ◽

10.1080/00207210902977822 ◽

2009 ◽

Vol 96 (10) ◽

pp. 1023-1038

Author(s):

Sheng Chang ◽

Gaofeng Wang ◽

Qijun Huang ◽

Hao Wang

Keyword(s):

Analytical Solution ◽

Metal Oxide ◽

Surface Potential ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate

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Consideration of Performance Limitation of Sub-100-nm Double-Gate Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l1096 ◽

2002 ◽

Vol 41 (Part 2, No. 10A) ◽

pp. L1096-L1098 ◽

Cited By ~ 2

Author(s):

Shin-ichiro Yanagi ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Performance Limitation

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Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4916 ◽

1993 ◽

Vol 32 (Part 1, No. 11A) ◽

pp. 4916-4922 ◽

Cited By ~ 14

Author(s):

Kunihiro Suzuki ◽

Shigeo Satoh ◽

Tetsu Tanaka ◽

Satoshi Ando

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Analytical Models ◽

Double Gate

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Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dc14 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC14 ◽

Cited By ~ 3

Author(s):

Takahiro Kamei ◽

Yongxun Liu ◽

Kazuhiko Endo ◽

Shinichi O'uchi ◽

Junichi Tsukada ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Titanium Nitride ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

20 Nm

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Simulation of High–κ Dielectrics in Counter Doped Double Gate Metal Oxide Semiconductor Field Effect Transistors

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2010.1061 ◽

2010 ◽

Vol 5 (1) ◽

pp. 43-49

Author(s):

T. George James ◽

Saji Joseph ◽

Vincent Mathew

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate

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A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3283 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3283-3290 ◽

Cited By ~ 20

Author(s):

Te-Kuang Chiang ◽

Mei-Li Chen

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Short Channel ◽

Dual Material

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Cross-sectional dopant profiling and depletion layer visualization of SiC power double diffused metal-oxide-semiconductor field effect transistor using super-higher-order nonlinear dielectric microscopy

Journal of Applied Physics ◽

10.1063/1.4893959 ◽

2014 ◽

Vol 116 (8) ◽

pp. 084509 ◽

Cited By ~ 27

Author(s):

N. Chinone ◽

T. Nakamura ◽

Y. Cho

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Higher Order ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Cross Sectional ◽

Nonlinear Dielectric ◽

Dopant Profiling ◽

Effect Transistor

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Oscillation of gate leakage current in double-gate metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2716874 ◽

2007 ◽

Vol 101 (7) ◽

pp. 073709 ◽

Cited By ~ 12

Author(s):

V. Nam Do ◽

P. Dollfus

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage

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Analytical Solution of Nonlinear Poisson Equation for Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors

International Conference of Computational Methods in Sciences and Engineering 2004 (ICCMSE 2004) ◽

10.1201/9780429081385-146 ◽

2019 ◽

pp. 592-595

Author(s):

Shao-Ming Yu ◽

Shih-Ching Lo ◽

Yiming Li ◽

Jyun-Hwei Tsai

Keyword(s):

Analytical Solution ◽

Metal Oxide ◽

Poisson Equation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate

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