Thermal fatigue testing of thin metal films

2004 ◽  
Vol 75 (11) ◽  
pp. 4997-5004 ◽  
Author(s):  
R. Mönig ◽  
R. R. Keller ◽  
C. A. Volkert
Keyword(s):  
Thermal Fatigue ◽  
Fatigue Testing ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films

J0601-5-1 Development of Rapid Thermal Cycle Apparatus for for Testing Thermal Fatigue Resistance of Thin Metal Films

2010 ◽  
Vol 2010.7 (0) ◽  
pp. 283-284
Author(s):  
Shien RI ◽  
Takahiro SUGANO ◽  
Masumi SAKA ◽  
Mitsuo YAMASHITA ◽  
Fumiaki TOGOH ◽  
...  
Keyword(s):  
Fatigue Resistance ◽  
Thermal Fatigue ◽  
Thermal Cycle ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Thermal Fatigue Resistance

Fatigue and thermal fatigue damage analysis of thin metal films

2007 ◽  
Vol 47 (12) ◽  
pp. 2007-2013 ◽  
Author(s):  
G.P. Zhang ◽  
C.A. Volkert ◽  
R. Schwaiger ◽  
R. Mönig ◽  
O. Kraft
Keyword(s):  
Fatigue Damage ◽  
Thermal Fatigue ◽  
Metal Films ◽  
Thin Metal ◽  
Damage Analysis ◽  
Thin Metal Films ◽  
Fatigue Damage Analysis

Fatigue Testing of Thin Films

2011 ◽  
Vol 465 ◽  
pp. 552-555 ◽  
Author(s):  
Sofie Burger ◽  
Benjamin Rupp ◽  
Alfred Ludwig ◽  
Oliver Kraft ◽  
Christoph Eberl
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Fatigue Testing ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
First Results ◽  
Beam Bending ◽  
Film Processing ◽  
Thin Film Processing

Thin film processing has been a driving technology in microelectronics and mechanics for years. The reliability of such devices is often limited by the failure of thin films. Therefore a deeper understanding of fatigue mechanisms of thin films through experiments is necessary to develop physical based lifetime models. Thus, this paper focuses on a novel setup for micro beam bending of thin metal films on Si cantilever substrate and first results will be presented.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

On the electrocatalytic symbiotic synergism between Pt, Ni and Al in plasma vapour deposited PtxNiyAlz thin metal films for water electrolysis

2021 ◽  
Vol 494 ◽  
pp. 229344
Author(s):  
Roelof J. Kriek ◽  
Liesel A. van Heerden ◽  
Anzel Falch ◽  
Malcolm I. Gillespie ◽  
Alaa Y. Faid ◽  
...  
Keyword(s):  
Water Electrolysis ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films
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