p-type conduction in N–Al co-doped ZnO thin films

2004 ◽  
Vol 85 (15) ◽  
pp. 3134-3135 ◽  
Author(s):  
J. G. Lu ◽  
Z. Z. Ye ◽  
F. Zhuge ◽  
Y. J. Zeng ◽  
B. H. Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Doped Zno ◽  
P Type ◽  
Type Conduction ◽  
Co Doped

The effect of sulfur on the electrical properties of S and N co-doped ZnO thin films: experiment and first-principles calculations

2015 ◽  
Vol 17 (26) ◽  
pp. 16705-16708 ◽  
Author(s):  
Wenzhe Niu ◽  
Hongbin Xu ◽  
Yanmin Guo ◽  
Yaguang Li ◽  
Zhizhen Ye ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
First Principles ◽  
Zno Thin Films ◽  
First Principles Calculations ◽  
Type Conductivity ◽  
Doped Zno ◽  
P Type ◽  
Co Doped

The S dopants in S–N co-doped ZnO contribute to easier doping and p-type conductivity, as concluded by experiment and calculations.

An investigation of the electrical properties of p-type Al:N Co-doped ZnO thin films

2012 ◽  
Vol 61 (10) ◽  
pp. 1737-1741 ◽  
Author(s):  
Balasubramaniam Saravanakumar ◽  
Rajneesh Mohan ◽  
Sang-Jae Kim
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Zno Thin Films ◽  
Doped Zno ◽  
P Type ◽  
Co Doped

Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

2013 ◽  
Vol 103 (7) ◽  
pp. 072109 ◽  
Author(s):  
Sushil Kumar Pandey ◽  
Saurabh Kumar Pandey ◽  
Vishnu Awasthi ◽  
M. Gupta ◽  
U. P. Deshpande ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Zno Thin Films ◽  
Doped Zno ◽  
P Type ◽  
Type Conduction

scholarly journals Optical and electrical characteristics of p-type AlN co-doped ZnO thin films synthesized by RF sputtering

2021 ◽  
Vol 33 (1) ◽  
pp. 101229
Author(s):  
A. Ismail ◽  
M.J. Abdullah ◽  
M.A. Qaeed ◽  
Mohammed A. Khamis ◽  
Bandar Ali AL-Asbahi ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Zno Thin Films ◽  
Electrical Characteristics ◽  
Doped Zno ◽  
P Type ◽  
Co Doped

p-type conduction in unintentional carbon-doped ZnO thin films

2007 ◽  
Vol 91 (7) ◽  
pp. 072101 ◽  
Author(s):  
S. T. Tan ◽  
X. W. Sun ◽  
Z. G. Yu ◽  
P. Wu ◽  
G. Q. Lo ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Carbon Doped ◽  
Doped Zno ◽  
P Type ◽  
Type Conduction

scholarly journals Realization of p-type Conduction in Antimony Doped ZnO Thin Films by PLD

2009 ◽  
Vol 22 (10) ◽  
pp. 814-820
Author(s):  
Ki-Ryeol Bae ◽  
Dong-Wook Lee ◽  
J. Elanchezhiyan ◽  
Won-Jae Lee ◽  
Yun-Mi Bae ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Doped Zno ◽  
P Type ◽  
Type Conduction

scholarly journals Enhanced Electrical Properties and Stability of P-Type Conduction in ZnO Transparent Semiconductor Thin Films by Co-Doping Ga and N

Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1069
Author(s):  
Chien-Yie Tsay ◽  
Wan-Yu Chiu
Keyword(s):  
Thin Films ◽  
Hole Concentration ◽  
Sol Gel ◽  
Co Doping ◽  
Semiconductor Thin Films ◽  
Doped Zno ◽  
Transparent Semiconductor ◽  
P Type ◽  
Type Conduction ◽  
Co Doped

P-type ZnO transparent semiconductor thin films were prepared on glass substrates by the sol-gel spin-coating process with N doping and Ga–N co-doping. Comparative studies of the microstructural features, optical properties, and electrical characteristics of ZnO, N-doped ZnO (ZnO:N), and Ga–N co-doped ZnO (ZnO:Ga–N) thin films are reported in this paper. Each as-coated sol-gel film was preheated at 300 °C for 10 min in air and then annealed at 500 °C for 1 h in oxygen ambient. X-ray diffraction (XRD) examination confirmed that these ZnO-based thin films had a polycrystalline nature and an entirely wurtzite structure. The incorporation of N and Ga–N into ZnO thin films obviously refined the microstructures, reduced surface roughness, and enhanced the transparency in the visible range. X-ray photoelectron spectroscopy (XPS) analysis confirmed the incorporation of N and Ga–N into the ZnO:N and ZnO:Ga–N thin films, respectively. The room temperature PL spectra exhibited a prominent peak and a broad band, which corresponded to the near-band edge emission and deep-level emission. Hall measurement revealed that the ZnO semiconductor thin films were converted from n-type to p-type after incorporation of N into ZnO nanocrystals, and they had a mean hole concentration of 1.83 × 1015 cm−3 and a mean resistivity of 385.4 Ω·cm. In addition, the Ga–N co-doped ZnO thin film showed good p-type conductivity with a hole concentration approaching 4.0 × 1017 cm−3 and a low resistivity of 5.09 Ω·cm. The Ga–N co-doped thin films showed relatively stable p-type conduction (>three weeks) compared with the N-doped thin films.

p-type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient

2013 ◽  
Vol 114 (16) ◽  
pp. 163107 ◽  
Author(s):  
Sushil Kumar Pandey ◽  
Saurabh Kumar Pandey ◽  
Vishnu Awasthi ◽  
Ashish Kumar ◽  
Uday P. Deshpande ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Zno Thin Films ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Doped Zno ◽  
P Type ◽  
Dual Ion Beam Sputtering ◽  
Type Conduction

PROPERTIES OF GaN-DOPED ZnO THIN FILMS PREPARED BY PULSED LASER DEPOSITION

2010 ◽  
Vol 24 (28) ◽  
pp. 2785-2791
Author(s):  
J. ELANCHEZHIYAN ◽  
D. W. LEE ◽  
W. J. LEE ◽  
B. C. SHIN
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray ◽  
Doped Zno ◽  
P Type ◽  
Type Conduction

p-type conduction in ZnO thin films has been realized by doping with GaN . Undoped and GaN -doped ZnO thin films were prepared by the pulsed laser deposition technique. All the grown films have been characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and Hall effect measurements in order to study their structural, morphological and electrical properties, respectively. The presence of dopants in the films has been confirmed by energy dispersive X-ray spectroscopy (EDS). XRD results reveal that the wurtzite structure deviates for the films with higher concentrations of GaN . Hall measurements show that the 5 and 10 at.% GaN -doped ZnO films have p-type conduction.

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