Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method

2004 ◽  
Vol 85 (12) ◽  
pp. 2163-2165 ◽  
Author(s):  
Y. Xi ◽  
E. F. Schubert
Keyword(s):  
Temperature Measurement ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Junction Temperature ◽  
Forward Voltage ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

ACCURATE MEASUREMENT OF ULTRAVIOLET LIGHT-EMITTING DIODES

2021 ◽  
Author(s):  
C. Yuqin Zong ◽  
Cameron Miller
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Luminous Flux ◽  
Junction Temperature ◽  
Integrating Sphere ◽  
Light Emitting ◽  
Type D ◽  
Uv Led ◽  
Uv Leds ◽  
Ultraviolet Light Emitting Diodes

We have developed a new calibration capability for 200 nm to 400 nm ultraviolet light-emitting diodes (UV LEDs) using a Type D gonio-spectroradiometer. The recently-introduced mean differential continuous pulse (M-DCP) method is used to overcome the measurement difficulty associated with the initial forward voltage, VF, anomaly of a UV LED, which makes it impossible to use VF to infer junction temperature, TJ, during pulsed operation. The new measurement facility was validated indirectly by comparing the measured total luminous flux of a white LED with that measured using the NIST’s 2.5 m absolute integrating sphere. The expanded calibration uncertainty for the total radiant flux is approximately 2 % to 3 % (k = 2) depending the wavelength of the UV LED.

Junction Temperature in Ultraviolet Light-Emitting Diodes

2005 ◽  
Vol 44 (10) ◽  
pp. 7260-7266 ◽  
Author(s):  
Yangang Xi ◽  
Thomas Gessmann ◽  
Jingqun Xi ◽  
Jong Kyu Kim ◽  
Jay M. Shah ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Junction Temperature ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

A Comparative Study of Thermal Metrology Techniques for Ultraviolet Light Emitting Diodes

2013 ◽  
Vol 135 (9) ◽  
Author(s):  
Shweta Natarajan ◽  
Yishak Habtemichael ◽  
Samuel Graham
Keyword(s):  
Raman Spectroscopy ◽  
Comparative Study ◽  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum ◽  
Forward Voltage ◽  
Light Emitting ◽  
Uv Leds ◽  
Ultraviolet Light Emitting Diodes

Methods used to measure the temperature of AlxGa1−xN based ultraviolet light emitting diodes (UV LEDs) are based on optical or electrical phenomena that are sensitive to either local, surface, or average temperatures within the LED. A comparative study of the temperature rise of AlxGa1−xN UV LEDs measured by micro-Raman spectroscopy, infrared (IR) thermography, and the forward voltage method is presented. Experimental temperature measurements are provided for UV LEDs with micropixel and interdigitated contact geometries, as well as for a number of different packaging configurations. It was found that IR spectroscopy was sensitive to optical properties of the device layers, while forward voltage method provided higher temperatures, in general. Raman spectroscopy was used to measure specific layers within the LED, showing that growth substrate temperatures in the flip-chip LEDs agreed more closely to IR measurements while layers closer to the multiple quantum wells (MQWs) agreed more closely with Forward Voltage measurements.

Visible Luminescence of the InGaN/GaN Ultraviolet Light-emitting Diodes 365 nm

2017 ◽  
Vol 9 (5) ◽  
pp. 05031-1-05031-5 ◽  
Author(s):  
V. P. Veleschuk ◽  
◽  
A. I. Vlasenko ◽  
Z. K. Vlasenko ◽  
D. N. Khmil ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Visible Luminescence ◽  
Ultraviolet Light Emitting Diodes
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