scholarly journals Time-resolved cavity ringdown study of the Si and SiH3 surface reaction probability during plasma deposition of a-Si:H at different substrate temperatures

2004 ◽  
Vol 96 (8) ◽  
pp. 4094-4106 ◽  
Author(s):  
J. P. M. Hoefnagels ◽  
Y. Barrell ◽  
W. M. M. Kessels ◽  
M. C. M. van de Sanden
Keyword(s):  
Surface Reaction ◽  
Plasma Deposition ◽  
Reaction Probability ◽  
Time Resolved ◽  
Cavity Ringdown ◽  
Substrate Temperatures

Relation between Growth Precursors and Film Properties for Plasma Deposition of a-Si:H at Rates up to 100 Å/s

2000 ◽  
Vol 609 ◽  
Author(s):  
W.M.M. Kessels ◽  
A.H.M. Smets ◽  
J.P.M. Hoefnagels ◽  
M.G.H. Boogaarts ◽  
D.C. Schram ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Surface Reaction ◽  
Film Growth ◽  
Plasma Deposition ◽  
Reaction Probability ◽  
Film Properties ◽  
Deposition Rates ◽  
Minor Contribution ◽  
A Minor

ABSTRACTFrom investigations on the SiH3 and SiH radical density and the surface reaction probability in a remote Ar-H2-SiH4 plasma, it is unambiguously demonstrated that the a-Si:H film quality improves significantly with increasing contribution of SiH3 and decreasing contribution of very reactive (poly)silane radicals. Device quality a-Si:H is obtained at deposition rates up to 100 Å/s for conditions where film growth is governed by SiH3 (contribution ∼90%) and where SiH has only a minor contribution (∼2%). Furthermore, for SiH3 dominated film growth the effect of the deposition rate on the a-Si:H film properties with respect to the substrate temperature is discussed.

Microcontroller based resonance tracking unit for time resolved continuous wave cavity-ringdown spectroscopy measurements

2012 ◽  
Vol 83 (4) ◽  
pp. 043110 ◽  
Author(s):  
Ondrej Votava ◽  
Milan Mašát ◽  
Alexander E. Parker ◽  
Chaithania Jain ◽  
Christa Fittschen
Keyword(s):  
Continuous Wave ◽  
Cavity Ringdown Spectroscopy ◽  
Time Resolved ◽  
Cavity Ringdown

Reaction Kinetics of Atomic chlorine on Si(100)2×1

1992 ◽  
Vol 280 ◽  
Author(s):  
Kazuhiro Karahashi ◽  
Jiro Matsuo ◽  
Kei Horiuchi
Keyword(s):  
Activation Energy ◽  
Transition State ◽  
Solid Surface ◽  
Surface Reaction ◽  
Thermal Excitation ◽  
Silicon Substrates ◽  
Chlorine Atoms ◽  
Substrate Temperatures ◽  
Kinetics Of ◽  
Atomic Chlorine

ABSTRACTThe interaction of atomic chlorine with Si(100)2×1 surfaces was studied by using chlorine atom beams. The etching reaction of silicon substrates has been observed when chlorine atoms impinged on the chlorinated surface, at substrate temperatures below 600°C. The major desorption product is SiCl2. Studies of the temperature dependence of the reaction showed that the activation energy are 0.08 eV at 0.4 ML and 0.2 eV at 0.8 ML. These extremely low activation energies suggest that the surface reaction is mainly driven by the internal energy of incident atomic chlorine instead of thermal excitation from Si(100) solid surface. Therefore chlorine atoms enter the transition state without equilibrating at the surface prior to the reaction. The reaction strongly depends on the chlorine coverage on the surface. The reaction occurred above 0.3 ML. The etching probability of the surface reached a maximum at 0.4 ML, and decreased with increasing coverage.

Effect of Plasma Modulation in the Glow Discharge Deposition of Amorphous Silicon Films

1990 ◽  
Vol 204 ◽  
Author(s):  
G. Bruno ◽  
P. Capezzuto ◽  
G. Cicala ◽  
P. Manodoro
Keyword(s):  
Amorphous Silicon ◽  
Material Properties ◽  
Silicon Germanium ◽  
Optical Emission Spectroscopy ◽  
Plasma Deposition ◽  
Optical Emission ◽  
Time Resolved ◽  
Formation Kinetics ◽  
Phase Characterization ◽  
Emitting Species

ABSTRACTThe plasma deposition of hydrogenated and fluorinated amorphous silicon (a-Si:H,F) and silicon-germanium alloys (a-Si,Ge:H,F) from SiF4-H2 and SiF 4-GeH 4-H2 mixtures, respectively, has been studied in continuous (CW) and modulated wave (MW) r.f. discharges. It has been found that the period and duty cycle of the modulated wave strongly affect the plasma composition, the surface homogeneity and the material properties. The plasma-phase characterization, performed by time resolved optical emission spectroscopy (TR-OES), supplies arguments on the origin of emitting species and on their formation kinetics. It has been found that H* and SiFx are formed by a direct electron impact process involving the same species in the ground state. In addition, the surface homogeneity and some material properties are strongly improved by plasma modulation.

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