Effect of high-frequency driving current on magnetization reversal in Co-rich amorphous microwires

2004 ◽  
Vol 85 (12) ◽  
pp. 2292-2294 ◽  
Author(s):  
A. Chizhik ◽  
A. Zhukov ◽  
J. Gonzalez ◽  
J. M. Blanco
Keyword(s):  
Magnetization Reversal ◽  
High Frequency ◽  
Driving Current ◽  
Amorphous Microwires

High-Frequency Electric Current Influence on Magnetization Reversal and Domain Structure in Co-Rich Amorphous Microwires

2012 ◽  
Vol 48 (11) ◽  
pp. 3800-3802 ◽  
Author(s):  
A. Chizhik ◽  
A. Stupakiewicz ◽  
A. Zhukov ◽  
A. Maziewski ◽  
J. Gonzalez
Keyword(s):  
Electric Current ◽  
Domain Structure ◽  
Magnetization Reversal ◽  
High Frequency ◽  
Amorphous Microwires

GHz magnetic field influence on magnetization reversal in amorphous microwires

2014 ◽  
Vol 11 (5-6) ◽  
pp. 986-988
Author(s):  
A. Chizhik ◽  
M. Ipatov ◽  
A. Stupakiewicz ◽  
A. Zhukov ◽  
A. Maziewski ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetization Reversal ◽  
Amorphous Microwires ◽  
Field Influence

Investigation of surface magnetization reversal in Co-rich amorphous microwires with magneto-impedance effect

2006 ◽  
Vol 384 (1-2) ◽  
pp. 5-8 ◽  
Author(s):  
A. Chizhik ◽  
C. Garcia ◽  
A. Zhukov ◽  
J. Gonzalez ◽  
L. Dominguez ◽  
...  
Keyword(s):  
Magnetization Reversal ◽  
Surface Magnetization ◽  
Amorphous Microwires

Influence of interlayer dipolar coupling on magnetization reversal and high-frequency dynamics in asymmetric NiFe/Cu/NiFe circular nanorings

2008 ◽  
Vol 104 (6) ◽  
pp. 063510 ◽  
Author(s):  
M. Madami ◽  
S. Tacchi ◽  
G. Gubbiotti ◽  
G. Carlotti ◽  
H. Pandana ◽  
...  
Keyword(s):  
Magnetization Reversal ◽  
High Frequency ◽  
Dipolar Coupling

Spin Reorientation Transition and Magnetization Reversal Mechanism of Gd Doped FeCo High-Frequency Soft Magnetic Thin Films

2014 ◽  
Vol 924 ◽  
pp. 141-151 ◽  
Author(s):  
Yu Rong An ◽  
Yue Li ◽  
Zhen Wang ◽  
Ya Lu Zuo ◽  
Li Xi
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
High Frequency ◽  
Uniaxial Anisotropy ◽  
Spin Reorientation ◽  
Spin Reorientation Transition ◽  
Sputtering Power ◽  
Deposition Power ◽  
Reversal Mechanism

The magnetic FeCoGd thin films with various sputtering power from 10 to 30 W were fabricated on glass substrates by magnetron co-sputtering. The crystal structure of as-deposited FeCoGd thin films was investigated by X-ray diffraction. And an increasing trend of grain size with the increasing sputtering power was shown. When sputtering power is below 30 W, the films exhibited obviously in-plane uniaxial magnetic anisotropy, and the in-plane magnetic anisotropy field Hkdecreased with increasing deposition power. Moreover, good high frequency characteristics were obtained. The magnetization reversal mechanism has been investigated via the in-plane angular dependences of the magnetization and the coercivity. The experimental data points indicated that the magnetization reversal mechanism of FeCoGd film with in-plane uniaxial anisotropy is domain-wall depinning and coherent rotation when the applied field is close to the easy axis and hard axis, respectively. A spin reorientation transition phenomenon was observed when deposition power is larger than 30 W. A stripe domain structure for the sample with 30 W deposition power was developed due to a dominated perpendicular magnetic anisotropy.

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