Room temperature sensing of ozone by transparent p-type semiconductor CuAlO2

2004 ◽  
Vol 85 (10) ◽  
pp. 1728-1729 ◽  
Author(s):  
X. G. Zheng ◽  
K. Taniguchi ◽  
A. Takahashi ◽  
Y. Liu ◽  
C. N. Xu
Keyword(s):  
Room Temperature ◽  
Temperature Sensing ◽  
Type Semiconductor ◽  
P Type

Solid-Phase Epitaxial Growth of A-Site-Ordered Perovskite Sr4−xErxCo4O12−δ: A Room Temperature Ferrimagnetic p-Type Semiconductor

2015 ◽  
Vol 1 (12) ◽  
pp. 1500199 ◽  
Author(s):  
Takayoshi Katase ◽  
Hidefumi Takahashi ◽  
Tetsuya Tohei ◽  
Yuki Suzuki ◽  
Michihiko Yamanouchi ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Room Temperature ◽  
Solid Phase ◽  
Type Semiconductor ◽  
A Site ◽  
P Type

Synergistic effect by Na doping and S substitution for high thermoelectric performance of p-type MnTe

2017 ◽  
Vol 5 (21) ◽  
pp. 5076-5082 ◽  
Author(s):  
Yangyang Ren ◽  
Junyou Yang ◽  
Qinghui Jiang ◽  
Dan Zhang ◽  
Zhiwei Zhou ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Synergistic Effect ◽  
Band Gap ◽  
Room Temperature ◽  
Hole Concentration ◽  
Direct Band Gap ◽  
Na Doping ◽  
Type Semiconductor ◽  
Direct Band ◽  
P Type

Pristine MnTe is a p-type semiconductor with a relatively low hole concentration of 1018 cm−3, low electrical conductivity, and thus poor TE performance at room temperature owing to the broad direct band gap of 1.27 eV.

scholarly journals Au doping of CdS polycrystalline films prepared by co-sputtering of CdS–Cd-Au targets

2012 ◽  
Vol 25 (4) ◽  
pp. 214-217
Author(s):  
M. Becerril ◽  
H. Silva López ◽  
O. Zelaya Ángel ◽  
J. R. Vargas García
Keyword(s):  
Electrical Resistivity ◽  
Optical Properties ◽  
Room Temperature ◽  
Polycrystalline Films ◽  
Structural And Optical Properties ◽  
Small Areas ◽  
Glass Substrates ◽  
Corning Glass ◽  
Type Semiconductor ◽  
P Type

Au doped CdS polycrystalline films were grown on Corning glass substrates at room temperature by co-sputtering from a CdS–Cd–Au target. Elemental Cd and Au were placed onto the CdS target covering small areas. The electrical, structural, and optical properties were analyzed as a function of Au content. The Au doped CdS polycrystalline films showed a p-type semiconductor nature. It was found that the electrical resistivity drops and the carrier concentration increases as a consequence of Au incorporation within the CdS lattice. In both cases, the changes were of several orders of magnitude. 

La doped BaTiO3 nanostructures for room temperature sensing of NO2/NH3: Focus on La concentration and sensing mechanism

Vacuum ◽  
2019 ◽  
Vol 166 ◽  
pp. 37-44 ◽  
Author(s):  
R.P. Patil ◽  
Chaitanya Hiragond ◽  
G.H. Jain ◽  
Pawan K. Khanna ◽  
V.B. Gaikwad ◽  
...  
Keyword(s):  
Room Temperature ◽  
Temperature Sensing ◽  
Sensing Mechanism ◽  
La Doped

Transparent P-type Conducting LaCuOS Layered Oxysulfide

2001 ◽  
Vol 666 ◽  
Author(s):  
Kazushige Ueda ◽  
Shin-ichiro Inoue ◽  
Sakyo Hirose ◽  
Hiroshi Kawazoe ◽  
Hideo Hosono
Keyword(s):  
Electrical Conductivity ◽  
Visible Region ◽  
Optoelectronic Devices ◽  
Promising Material ◽  
High Transparency ◽  
Conducting Oxides ◽  
Excitonic Absorption ◽  
Type Semiconductor ◽  
Optical Applications ◽  
P Type

ABSTRACTMaterials design for transparent p-type conducting oxides was extended to oxysulfide system. LaCuOS was selected as a candidate for a transparent p-type semiconductor. It was found that the electrical conductivity of LaCuOS was p-type and controllable from semiconducting to semi-metallic states by substituting Sr2+ for La3+. LaCuOS films showed high transparency in the visible region, and the bandgap estimated was approximately 3.1 eV. Moreover, it was revealed that LaCuOS showed sharp excitonic absorption and emission at the bandgap edge, which is advantageous for optical applications. A layered oxysulfide, LaCuOS, was proposed to be a promising material for optoelectronic devices.

The Study of p-n and Schottky Junction for Magnetodiode

2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Simulation Model ◽  
Hall Effect ◽  
Schottky Junction ◽  
Field Sensitivity ◽  
Field Response ◽  
Type Semiconductor ◽  
Simulation Results ◽  
P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

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