Wavelength control of 1.3–1.6 μm light emission from the quantum dots self-formed in GaAs∕InAs short-period superlattices grown on InP (411)A substrates

2004 ◽  
Vol 96 (3) ◽  
pp. 1373-1375 ◽  
Author(s):  
J. Mori ◽  
T. Nakano ◽  
T. Shimada ◽  
S. Hasegawa ◽  
H. Asahi
Keyword(s):  
Quantum Dots ◽  
Light Emission ◽  
Short Period ◽  
Short Period Superlattices ◽  
Wavelength Control

InAs Quantum Dots in AlAs/GaAs Short Period Superlattices: Structure, Optical Characteristics and Laser Diodes

2001 ◽  
Vol 707 ◽  
Author(s):  
Vadim Tokranov ◽  
M. Yakimov ◽  
A. Katsnelson ◽  
K. Dovidenko ◽  
R. Todt ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Inas Quantum Dots ◽  
Transmission Electron ◽  
Short Period ◽  
Short Period Superlattices ◽  
Emitting Lasers ◽  
Cladding Layers

ABSTRACTThe influence of two monolayer - thick AlAs under- and overlayers on the formation and properties of self-assembled InAs quantum dots (QDs) has been studied using transmission electron microscopy (TEM) and photoluminescence (PL). Single sheets of InAs QDs were grown inside a 2ML/8ML AlAs/GaAs short-period superlattice with various combinations of under- and overlayers. It was found that 2.4ML InAs QDs with GaAs underlayer and 2ML AlAs overlayer exhibited the lowest QD surface density of 4.2x1010 cm-2 and the largest QD lateral size of about 19 nm as compared to the other combinations of cladding layers. This InAs QD ensemble has also shown the highest room temperature PL intensity with a peak at 1210 nm and the narrowest linewidth, 34 meV. Fabricated edge-emitting lasers using triple layers of InAs QDs with AlAs overlayer demonstrated 120 A/cm2 threshold current density and 1230 nm emission wavelength at room temperature. Excited state QD lasers have shown high thermal stability of threshold current up to 130°C.

InAs quantum dots in AlAs/GaAs short period superlattices: structure, optical characteristics and laser diodes

2001 ◽  
Vol 692 ◽  
Author(s):  
Vadim Tokranov ◽  
M. Yakimov ◽  
A. Katsnelson ◽  
K. Dovidenko ◽  
R. Todt ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Inas Quantum Dots ◽  
Transmission Electron ◽  
Short Period ◽  
Short Period Superlattices ◽  
Emitting Lasers ◽  
Cladding Layers

AbstractThe influence of two monolayer - thick AlAs under- and overlayers on the formation and properties of self-assembled InAs quantum dots (QDs) has been studied using transmission electron microscopy (TEM) and photoluminescence (PL). Single sheets of InAs QDs were grown inside a 2ML/8ML AlAs/GaAs short-period superlattice with various combinations of under- and overlayers. It was found that 2.4ML InAs QDs with GaAs underlayer and 2ML AlAs overlayer exhibited the lowest QD surface density of 4.2×1010 cm-2 and the largest QD lateral size of about 19 nm as compared to the other combinations of cladding layers. This InAs QD ensemble has also shown the highest room temperature PL intensity with a peak at 1210 nm and the narrowest linewidth, 34 meV. Fabricated edge-emitting lasers using triple layers of InAs QDs with AlAs overlayer demonstrated 120 A/cm2 threshold current density and 1230 nm emission wavelength at room temperature. Excited state QD lasers have shown high thermal stability of threshold current up to 130°C.

Anomalous diamagnetic shift of excitons in II–VI quantum dots and in indirect short period superlattices

2002 ◽  
Vol 13 (2-4) ◽  
pp. 263-268 ◽  
Author(s):  
N Miura ◽  
K Uchida ◽  
T Yasuhira ◽  
E Kurtz ◽  
C Klingshirn ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Diamagnetic Shift ◽  
Short Period ◽  
Short Period Superlattices

1.3-1.6-µm-Wavelength Quantum Dots Self-Formed in GaAs/InAs Short-Period Superlattices Grown on InP (411)A Substrates

2001 ◽  
Vol 40 (Part 2, No. 6B) ◽  
pp. L586-L588 ◽  
Author(s):  
Satoshi Matsuda ◽  
Hajime Asahi ◽  
Jun Mori ◽  
Daisuke Watanabe ◽  
Kumiko Asami
Keyword(s):  
Quantum Dots ◽  
Short Period ◽  
Short Period Superlattices

Optical properties of quantum dots self-formed in GaP/InP short period superlattices grown on GaAs (N11) substrates

1998 ◽  
Vol 130-132 ◽  
pp. 729-736 ◽  
Author(s):  
S.J Kim ◽  
H Asahi ◽  
K Asami ◽  
M Takemoto ◽  
M Fudeta ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Short Period ◽  
Short Period Superlattices

Improvement of Optical Properties of Multilayer Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices on GaAs(311)A

2000 ◽  
Vol 39 (Part 1, No. 7B) ◽  
pp. 4601-4603 ◽  
Author(s):  
Daisuke Watanabe ◽  
Hajime Asahi ◽  
Joo-Hyong Noh ◽  
Mayuko Fudeta ◽  
Jun Mori ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Short Period ◽  
Short Period Superlattices
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