Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy

2004 ◽  
Vol 96 (2) ◽  
pp. 1104-1110 ◽  
Author(s):  
N. Gogneau ◽  
D. Jalabert ◽  
E. Monroy ◽  
E. Sarigiannidou ◽  
J. L. Rouvière ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Structural Properties ◽  
Molecular Beam

Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

2007 ◽  
Vol 101 (10) ◽  
pp. 103526 ◽  
Author(s):  
J. Miguel-Sánchez ◽  
A. Guzmán ◽  
U. Jahn ◽  
A. Trampert ◽  
J. M. Ulloa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Structural Properties ◽  
Molecular Beam ◽  
Nitrogen Species

Influence of arsenic pressure on photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

2005 ◽  
Vol 281 (2-4) ◽  
pp. 249-254 ◽  
Author(s):  
E.-M. Pavelescu ◽  
T. Hakkarainen ◽  
V.D.S. Dhaka ◽  
N.V. Tkachenko ◽  
T. Jouhti ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Structural Properties ◽  
Molecular Beam

scholarly journals Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties

1999 ◽  
Vol 4 (S1) ◽  
pp. 333-338
Author(s):  
Nicolas Grandjean ◽  
Jean Massies ◽  
Mathieu Leroux ◽  
Marguerite Laügt ◽  
Philippe Vennéguès ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Structural Properties ◽  
Molecular Beam ◽  
Stokes Shift ◽  
Growth Conditions ◽  
Structural Quality ◽  
Luminescence Spectra ◽  
Near Band Edge ◽  
Flat Surfaces

The growth of InGaN layers was carried out by molecular beam epitaxy (MBE). The nitrogen precursor was ammonia. The optical and structural properties of the InGaN layers have been investigated by transmission electron microscopy (TEM), x-ray diffraction (XRD) and photoluminescence (PL). For optimized growth conditions, the PL spectrum of InGaN (x=0.1) alloy is narrow (FWHM ≤ 50 meV) and the Stokes shift measured by PL excitation is weak (<50 meV), i.e. near band edge transitions are observed. Under these conditions, flat surfaces can be obtained, and InGaN/GaN quantum wells (QWs) with sharp interfaces can be grown. On the other hand, when growth conditions depart from a narrow optimum window, the structural quality of the samples strongly degrade, whereas the luminescence spectra are dominated by deep levels, exhibiting a strong Stokes shift. MBE grown light emitting diodes (LEDs) using InGaN/GaN QWs have been fabricated. Their electroluminescence (EL) peaks at 440 nm at 300K.

Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties

1998 ◽  
Vol 537 ◽  
Author(s):  
Nicolas Grandjean ◽  
Jean Massies ◽  
Mathieu Leroux ◽  
Marguerite Laügt ◽  
Philippe Vennéguès ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Structural Properties ◽  
Molecular Beam ◽  
Stokes Shift ◽  
Growth Conditions ◽  
Structural Quality ◽  
Luminescence Spectra ◽  
Near Band Edge ◽  
Flat Surfaces

AbstractThe growth of InGaN layers was carried out by molecular beam epitaxy (MBE). The nitrogen precursor was ammonia. The optical and structural properties of the InGaN layers have been investigated by transmission electron microscopy (TEM), x-ray diffraction (XRD) and photoluminescence (PL). For optimized growth conditions, the PL spectrum of InGaN (x=0.1) alloy is narrow (FWHM ≤ 50 meV) and the Stokes shift measured by PL excitation is weak (<50 meV), i.e. near band edge transitions are observed. Under these conditions, flat surfaces can be obtained, and InGaN/GaN quantum wells (QWs) with sharp interfaces can be grown. On the other hand, when growth conditions depart from a narrow optimum window, the structural quality of the samples strongly degrade, whereas the luminescence spectra are dominated by deep levels, exhibiting a strong Stokes shift. MBE grown light emitting diodes (LEDs) using InGaN/GaN QWs have been fabricated. Their electroluminescence (EL) peaks at 440 nm at 300K.

scholarly journals Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy

2001 ◽  
Vol 225 (2-4) ◽  
pp. 550-555 ◽  
Author(s):  
Chin-An Chang ◽  
Cheng-Zu Wu ◽  
Pai-Yong Wang ◽  
Xing-Jian Guo ◽  
Yi-Tsuo Wu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Inas Quantum Dots
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