Development of an Ultra-High Vacuum Oven for High Temperature X-Ray Studies

2004 ◽  
Author(s):  
D. E. Nowak
Keyword(s):  
High Temperature ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Vacuum Oven ◽  
X Ray

scholarly journals Laser power meters as an X-ray power diagnostic for LCLS-II

2018 ◽  
Vol 25 (1) ◽  
pp. 72-76 ◽  
Author(s):  
Philip Heimann ◽  
Stefan Moeller ◽  
Sergio Carbajo ◽  
Sanghoon Song ◽  
Georgi Dakovski ◽  
...  
Keyword(s):  
Free Electron Laser ◽  
Laser Power ◽  
High Vacuum ◽  
Average Power ◽  
Gas Analysis ◽  
Ultra High Vacuum ◽  
Beam Path ◽  
X Ray ◽  
High Repetition ◽  
Residual Gas

For the LCLS-II X-ray instruments, laser power meters are being developed as compact X-ray power diagnostics to operate at soft and tender X-ray photon energies. These diagnostics can be installed at various locations along an X-ray free-electron laser (FEL) beamline in order to monitor the transmission of X-ray optics along the beam path. In addition, the power meters will be used to determine the absolute X-ray power at the endstations. Here, thermopile power meters, which measure average power, and have been chosen primarily for their compatibility with the high repetition rates at LCLS-II, are evaluated. A number of characteristics in the soft X-ray range are presented including linearity, calibrations conducted with a photodiode and a gas monitor detector as well as ultra-high-vacuum compatibility tests using residual gas analysis. The application of these power meters for LCLS-II and other X-ray FEL sources is discussed.

High vacuum high temperature X-ray camera

1960 ◽  
Vol 37 (8) ◽  
pp. 273-276 ◽  
Author(s):  
B A Hatt ◽  
P J C Kent ◽  
G I Williams
Keyword(s):  
High Temperature ◽  
High Vacuum ◽  
X Ray

Analysis Of Sige Fet Device Structures On Silicon-on-sapphire Substrates by X-Ray Diffraction

1998 ◽  
Vol 533 ◽  
Author(s):  
P. M. Mooney ◽  
J. O. Chu ◽  
J. A. Ott ◽  
J. L. Jordan-Sweet ◽  
B. S. Meyerson ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Wafer Cleaning ◽  
Device Structures

AbstractSi/Si1-xGex, heterostructures on improved silicon-on-sapphire substrates were grown epitaxially by ultra-high vacuum chemical vapor deposition for application as p-channel field effect transistors. High-resolution triple-axis x-ray diffraction was used to analyze these structures quantitatively and to evaluate the effects of device fabrication processes on them. Out-;diffusion of Ge from the Si1-xGex, quantum well was observed after fabrication as was the change in thickness of the Si cap layer due to wafer cleaning and gate oxidation at 875 °C

Structrual Characterization and Raman Scattering of Epitaxial Aluminum Nitride Thin Films on Si(111)

1992 ◽  
Vol 242 ◽  
Author(s):  
W. J. Meng ◽  
T. A. Perry ◽  
J. Heremans ◽  
Y. T. Cheng
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Raman Scattering ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Reactive Sputter Deposition ◽  
Transmission Electron ◽  
Substrate Temperatures

ABSTRACTThin films of aluminum nitride were grown epitaxially on Si(111) by ultra-high-vacuum dc magnetron reactive sputter deposition. Epitaxy was achieved at substrate temperatures of 600° C or above. We report results of film characterization by x-ray diffraction, transmission electron microscopy, and Raman scattering.

scholarly journals The Determination of Interfacial Structure and Phase Transitions in Al/Cu and Al/Ni Interfaces by Means of Surface Extended X-Ray Absorption Fine Structure

1991 ◽  
Vol 238 ◽  
Author(s):  
E. V. Barrera ◽  
S. M. Heald
Keyword(s):  
Fine Structure ◽  
Room Temperature ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Interfacial Structure ◽  
Reaction Products ◽  
X Ray ◽  
Absorption Fine ◽  
Reaction Zones ◽  
X Ray Absorption

ABSTRACTSurface extended x-ray absorption fine structure (SEXAFS) was used to investigate the interfacial conditions of Al/Cu and Al/Ni shallow buried interfaces. Previous studies using glancing angle extended x-ray absorption fine structure, x-ray reflectivity, photoemission, and SEXAFS produced conflicting results as to whether or not the interfaces between Al and Cu and Al and Ni were reacted upon room temperature deposition. In this study polycrystalline bilayers of Al/Cu and Al/Ni and trilayers of Al/Cu/Al and Al/Ni/Al were deposited on tantalum foil at room temperature in ultra high vacuum and analyzed to evaluate the reactivity of these systems on a nanometer scale. It became overwhelming apparent that the interfacial phase reactions were a function of the vacuum conditions. Samples deposited with the optimum vacuum conditions showed reaction products upon deposition at room temperature which were characterized by comparisons to standards and by least squares fitting to be CuAl2 and NiAl3 respectively. The results of this study showed that the reacted zone thicknesses were readily dependent on the deposition parameters. For both Al on Cu and Al on Ni as well as the metal on Al conditions 10A reaction zones were observed. These reaction zones were smaller than that observed for bilayers of Al on Cu (30Å) and Al on Ni (60Å) where deposition rates were much higher and samples were much thicker. The reaction species are evident by SEXAFS, where the previous photoemission studies only indicated that changes had occurred. Improved vacuum conditions as compared to the earlier experiments is primarily the reason reactions on deposition were seen in this study as compared to the earlier SEXAFS studies.

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