Simulation Study of Total-Electron-Yield X-ray Standing-Wave Spectra of Mo/SiC/Si/SiC and Mo/Si Multilayers

2004 ◽  
Author(s):  
Takeo Ejima
Keyword(s):  
Standing Wave ◽  
Simulation Study ◽  
Wave Spectra ◽  
Total Electron Yield ◽  
Total Electron ◽  
X Ray ◽  
Electron Yield

Effect of the Soft X-Ray Standing Wave Fields on the Total Electron Yield Spectra from an InP Crystal

1985 ◽  
Vol 24 (Part 2, No. 6) ◽  
pp. L475-L477 ◽  
Author(s):  
Toshiaki Ohta ◽  
Hideo Sekiyama ◽  
Yoshinori Kitajima ◽  
Haruo Kuroda ◽  
Toshio Takahashi ◽  
...  
Keyword(s):  
Standing Wave ◽  
Total Electron Yield ◽  
Total Electron ◽  
Wave Fields ◽  
X Ray ◽  
Electron Yield

Top layer's thickness dependence on total electron-yield X-ray standing-wave

2005 ◽  
Vol 144-147 ◽  
pp. 897-899 ◽  
Author(s):  
Takeo Ejima ◽  
Atsushi Yamazaki ◽  
Takanori Banse ◽  
Tadashi Hatano
Keyword(s):  
Standing Wave ◽  
Thickness Dependence ◽  
Total Electron Yield ◽  
Total Electron ◽  
X Ray ◽  
Electron Yield

Total-Electron-Yield X-Ray Standing-Wave Measurements of Multilayer X-Ray Mirrors for Interface Structure Evaluation

2002 ◽  
Vol 41 (Part 1, No. 6B) ◽  
pp. 4250-4252 ◽  
Author(s):  
Yasuji Muramatsu ◽  
Hisataka Takenaka ◽  
Eric M. Gullikson ◽  
Rupert C. C. Perera
Keyword(s):  
Standing Wave ◽  
Interface Structure ◽  
Total Electron Yield ◽  
Total Electron ◽  
X Ray ◽  
Wave Measurements ◽  
Electron Yield ◽  
Structure Evaluation

Soft X-ray refractive index by reconciling total electron yield with specular reflection: experimental determination of the optical constants of graphite

2018 ◽  
Vol 25 (5) ◽  
pp. 1433-1443
Author(s):  
C. Jansing ◽  
H. Wahab ◽  
H. Timmers ◽  
A. Gaupp ◽  
H.-C. Mertins
Keyword(s):  
Refractive Index ◽  
Optical Constants ◽  
Specular Reflection ◽  
Complex Refractive Index ◽  
Reflection Spectra ◽  
Total Electron Yield ◽  
Total Electron ◽  
X Ray ◽  
Electron Yield ◽  
Saturation Effects

The complex refractive index of many materials is poorly known in the soft X-ray range across absorption edges. This is due to saturation effects that occur there in total-electron-yield and fluorescence-yield spectroscopy and that are strongest at resonance energies. Aiming to obtain reliable optical constants, a procedure that reconciles electron-yield measurements and reflection spectroscopy by correcting these saturation effects is presented. The procedure takes into account the energy- and polarization-dependence of the photon penetration depth as well as the creation efficiency for secondary electrons and their escape length. From corrected electron-yield spectra the absorption constants and the imaginary parts of the refractive index of the material are determined. The real parts of the index are subsequently obtained through a Kramers–Kronig transformation. These preliminary optical constants are refined by simulating reflection spectra and adapting them, so that measured reflection spectra are reproduced best. The efficacy of the new procedure is demonstrated for graphite. The optical constants that have been determined for linearly polarized synchrotron light incident with p- and s-geometry provide a detailed and reliable representation of the complex refractive index of the material near π- and σ-resonances. They are also suitable for allotropes of graphite such as graphene.

VUV- and Soft X-Ray-Induced Optical Luminescence and X-Ray Absorption Fine Structures of Porous Silicon

1992 ◽  
Vol 281 ◽  
Author(s):  
T. K. Sham ◽  
D. T. Jiang ◽  
I. Coulthard ◽  
J. W. Lorimer ◽  
X. H. Feng ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Total Electron Yield ◽  
Total Electron ◽  
X Ray ◽  
Absorption Fine ◽  
Electron Yield ◽  
Optical Luminescence ◽  
Fine Structures ◽  
X Ray Absorption ◽  
Uv Excitation

ABSTRACTOptical luminescence in porous silicon induced by soft X-ray and vacuum UV excitation with energies in the vicinity of the Si K-edge (1838 eV) and the Si L-edge (99 eV) has been observed. The luminescence has been used, together with total electron yield, to record X-ray absorption fine structure (XAFS) in the near-edge region of both Si edges. The near- edge spectra recorded simultaneously with either luminescence or total electron yield were compared, and the implications of these measurements for the structure of porous silicon are discussed.

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