Effects of high temperature forming gas anneal on the characteristics of metal-oxide-semiconductor field-effect transistor with HfO2 gate stack

Rino Choi; Chang Seok Kang; Hag-Ju Cho; Young-Hee Kim; Mohammad S. Akbar; Jack C. Lee

doi:10.1063/1.1755412

Effects of high temperature forming gas anneal on the characteristics of metal-oxide-semiconductor field-effect transistor with HfO2 gate stack

Applied Physics Letters ◽

10.1063/1.1755412 ◽

2004 ◽

Vol 84 (24) ◽

pp. 4839-4841 ◽

Cited By ~ 17

Author(s):

Rino Choi ◽

Chang Seok Kang ◽

Hag-Ju Cho ◽

Young-Hee Kim ◽

Mohammad S. Akbar ◽

...

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Effect Transistor

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Study on Thermal Stability of Plasma-PH[sub 3] Passivated HfAlO/In[sub 0.53]Ga[sub 0.47]As Gate Stack for Advanced Metal-Oxide-Semiconductor Field Effect Transistor

Electrochemical and Solid-State Letters ◽

10.1149/1.3465300 ◽

2010 ◽

Vol 13 (10) ◽

pp. H336 ◽

Cited By ~ 6

Author(s):

Sumarlina Azzah Suleiman ◽

H. J. Oh ◽

A. Du ◽

C. M. Ng ◽

S. J. Lee

Keyword(s):

Thermal Stability ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Effect Transistor ◽

Thermal Stability Of

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Band alignments and improved leakage properties of (La2O3)0.5(SiO2)0.5/SiO2/GaN stacks for high-temperature metal-oxide-semiconductor field-effect transistor applications

Applied Physics Letters ◽

10.1063/1.3159473 ◽

2009 ◽

Vol 94 (25) ◽

pp. 252901 ◽

Cited By ~ 8

Author(s):

L. G. Gao ◽

B. Xu ◽

H. X. Guo ◽

Y. D. Xia ◽

J. Yin ◽

...

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Band Alignments ◽

Effect Transistor

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Analytical Threshold Model for Nanoscale Cylindrical Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistor with High-κ Gate Dielectric and Tri-Material Gate Stack

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.124202 ◽

2010 ◽

Vol 49 (12) ◽

pp. 124202 ◽

Cited By ~ 6

Author(s):

Cong Li ◽

Yi-Qi Zhuang ◽

Ru Han

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Threshold Model ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Surrounding Gate ◽

Effect Transistor

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Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO 2 /GeO 2 gate stack

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2016.11.014 ◽

2017 ◽

Vol 70 ◽

pp. 246-253 ◽

Cited By ~ 3

Author(s):

Yuta Nagatomi ◽

Tomoki Tateyama ◽

Shintaro Tanaka ◽

Wei-Chen Wen ◽

Taisei Sakaguchi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Effect Transistor

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Fabrication of gate stack with high gate work function for implantless enhancement-mode GaAs n-channel metal-oxide-semiconductor field effect transistor applications

Applied Physics Letters ◽

10.1063/1.2905259 ◽

2008 ◽

Vol 92 (12) ◽

pp. 123513 ◽

Cited By ~ 2

Author(s):

Ming Zhu ◽

Hock-Chun Chin ◽

Ganesh S. Samudra ◽

Yee-Chia Yeo

Keyword(s):

Metal Oxide ◽

Work Function ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Enhancement Mode ◽

Effect Transistor ◽

Gate Work Function

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Transient Characteristic of a Metal-Oxide Semiconductor Field Effect Transistor in an Automotive Regulator in High Temperature Surroundings

Transactions on Electrical and Electronic Materials ◽

10.4313/teem.2010.11.4.178 ◽

2010 ◽

Vol 11 (4) ◽

pp. 178-181

Author(s):

Chae-Dong Kang ◽

Kye-Soo Shin

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Transient Characteristic ◽

Effect Transistor

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Sub-30-nm Complementary Metal–Oxide–Semiconductor Field-Effect Transistor with Pt-Incorporated Fully Ni-Silicide/SiON Gate Stack

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dc16 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC16

Author(s):

Hidenobu Fukutome ◽

Kazuya Okubo ◽

Sinichi Akiyama ◽

Naoki Idani ◽

Hiroyuki Ohta ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Effect Transistor

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Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.7784 ◽

2008 ◽

Vol 47 (10) ◽

pp. 7784-7787 ◽

Cited By ~ 14

Author(s):

Kazuki Yamaji ◽

Masato Noborio ◽

Jun Suda ◽

Tsunenobu Kimoto

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Temperature Annealing ◽

Channel Mobility ◽

Effect Transistor

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Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106046 ◽

2021 ◽

Vol 134 ◽

pp. 106046

Author(s):

Shujun Ye ◽

Kikuo Yamabe ◽

Tetsuo Endoh

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

Journal of Applied Physics ◽

10.1063/5.0027214 ◽

2020 ◽

Vol 128 (24) ◽

pp. 244501

Author(s):

M. A. Anders ◽

P. M. Lenahan ◽

N. J. Harmon ◽

M. E. Flatté

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Zero Field ◽

Charge Pumping ◽

Effect Transistor

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